Magnetoelectronic device with variable magnetic write field
OwnerMark B. Johnsoninventor
Life of this patent
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Abstract
A new magnetic spin device can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin device is set inductively. A magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive coupling permits the linking of multiple spin transistors and spin transistor gates to perform combinational tasks. A half adder embodiment is specifically described, and other logic gates and combinations of half adders can be constructed to perform arithmetic functions as part of a microprocessor.
Claims20
A magnetic spin device comprising:
- a first ferromagnetic layer which has a changeable magnetization state;
- a second ferromagnetic layer with a fixed magnetization state;
- wherein the magnetic spin device has a spin resistance which is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel;
- a write line for receiving a write signal adapted for altering said changeable magnetization state, said write signal having a first variable amplitude including a first current value and a second larger current value than said first current value for setting the magnetic spin device to a first logic state, and a second variable amplitude including a third current value and a fourth larger current value than said third current value for setting the magnetic spin device to a second logic state.
A magnetic spin device comprising:
- a first ferromagnetic layer which has a changeable magnetization state;
- a second ferromagnetic layer with a fixed magnetization state;
- wherein the magnetic spin device has a non-volatile logic state which is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel;
- a write line for receiving a write signal adapted for altering said changeable magnetization state;
- wherein inductive coupling between said write line and said first ferromagnetic layer can be varied during operation of the magnetic spin device so that a magnitude of a magnetic write field associated with said write signal also can be varied.
A magnetic spin device comprising:
- a first ferromagnetic layer which has a changeable magnetization state;
- a second ferromagnetic layer with a fixed magnetization state;
- wherein the magnetic spin device has a logic state which is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel;
- a write line for receiving a write signal adapted for altering said changeable magnetization state, said write line including at least two write wires;
- wherein during a first mode of operation, said logic state can be changed to either a first value or a second value in response to a first combination of write signals present on said at least two write wires;
- and wherein during a second mode of operation, said logic state can be changed to said first value and/or said second value in response to a second combination of write signals present on said at least two write wires, said second combination of write signals being different from said first combination of write signals.
The magnetic spin device of 12, wherein the device can be initialized to said first mode of operation or said second mode of operation.
Dependencies are inferred from the claim text.