Power amplifier module

A power amplifier module comprising:

• an amplifier fabricated with GaAsHBTs packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with Si transistors or GaAsHBTs packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage,
• wherein the amplifier is a complex comprising a plurality of stages of amplifiers connected in tandem, and
• wherein the control circuit is a complex comprising a plurality of circuits that receive the control input voltage in common and supply respective idling currents behaving as aforesaid to the plurality of stages of amplifiers.

A power amplifier module comprising:

• an amplifier fabricated with GaAsHBTs packaged on a semiconductor integrated circuit;
• and
• a control circuit, that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with Si transistors or GaAsHBTs packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage,
• wherein the control circuit includes:
• a circuit that converts the input control voltage into current,
• a circuit that generates a reference voltage from tbe current into which the input control voltage has been converted and setting a gradient of voltage that changes in proportion to the input control voltage, and
• a circuit that converts the voltage into the idling current that changes exponentially,
• wherein a common circuit is formed, comprising the circuit that converts the input control voltage into current, the circuit that generates a reference voltage from the current into which the input control voltage has been converted and setting a gradient of voltage that changes in proportion to the input control voltage, and the circuit that converts the voltage into the idling current that changes exponentially, and
• wherein a plurality of circuits connected to said common circuit supply respective idling currents behaving as aforesaid to the plurality of stages of amplifiers.

A power amplifier module comprising:

• an amplifier fabricated with GaAsHBTs packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with Si transistors or GaAsHBTs packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage, and
• wherein the power amplifier module further includes a circuit for limiting the idling current once the input control voltage has reached a predetermined level.

A power amplifier module comprising:

• an amplifier fabricated with GaAsHBTs packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with Si transistors or GaAsHBTs packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage, and
• wherein the power amplifier module further includes a circuit by which the temperature characteristic of the idling current can be set optionally.

A power amplifier module comprising:

• an amplifier fabricated with SiGeHBTs or Si bipolar transistors packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with SiGeHBTs or Si bipolar transistors packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage,
• wherein the amplifier is a complex comprising a plurality of stages of amplifiers connected in tandem, and
• wherein the control circuit is a complex comprising a plurality of circuits that receive the control input voltage in common and supply respective idling currents behaving as aforesaid to the plurality of stages of amplifiers.

A power amplifier module comprising:

• an amplifier fabricated with SiGeHBTs of Si bipolar transistors packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit beign fabricated with SiGeHBTs or Si bipolar transistors packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage,
• wherein the control circuit includes:
• a circuit that converts the input control voltage into current,
• a circuit that generates a reference voltage from the current into which the input control voltage has been converted and setting a gradient of voltage that changes in proportion to the input control voltage, and
• a circuit that converts the voltage into the idling current that changes exponentially,
• wherein a common circuit is formed, comprising the circuit that converts the input control voltage into current, the circuit that generates a reference voltage from the current into which the input control voltage has been converted and setting a gradient of voltage that changes in proportion to the input control voltage, and the circuit that converts the voltage into the idling current that changes exponentially, and
• wherein a plurality of circuits are provided that supplies the respective idling currents to the plurality of stages of amplifiers.

A power amplifier module comprising:

• an amplifier fabricated with SiGeHBTs or Si bipolar transistors packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with SiGeHBTs or Si bipolar transistor packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage, and
• wherein the power amplifier module further includes a circuit for limiting the idling current once the input control voltage has reached a predetermined level.

A power amplifier module comprising:

• an amplifier fabricated with SiGeHBTs or Si bipolar transistors packaged on a semiconductor integrated circuit;
• and
• a control circuit that supplies the amplifier with an idling current that controls the output power of the amplifier, the control circuit being fabricated with SiGeHBTs or Si bipolar transistors packaged on a semiconductor integrated circuit,
• wherein the control circuit receives an input control voltage and makes the idling current behave so as to exponentially change relative to the input control voltage, and
• wherein the power amplifier module further includes a circuit by which the temperature characteristic of the idling current can be set optionally.