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US 6,958,525 B2Granted
Low dielectric constant film material, film and semiconductor device using such material
AssigneeFujitsu Limited
InventorsYoshihiro Nakata, Shun-ichi Fukuyama, Katsumi Suzuki, Ei Yano, Tamotsu Owada, Iwao Sugiura
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Abstract
A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- a first film formed on a surface of said semiconductor substrate and made of a first silica-containing porous material;
- and
- a second film in direct contact with said first film and made of a second silica-containing porous material, the second silica-containing porous material having an etching rate different from an etching rate or the first silica-containing porous material under a same etching condition;
- wherein the first and second silica-containing porous materials contain siloxane resin expressed by a general chemical formula of:
- (R10 to R12 represent hydrogen, oxygen or a monovalent hydrocarbon group, n1 represents an integer of 5 to 200, and X represents hydrogen or silicon), or:
- (R13 to R16 represent hydrogen, fluorine or a monovalent hydrocarbon group, n2 is an integer of 5 to 100, wherein at least one of R13 to R16 is hydrogen);
- wherein for the first silica-containing porous material, at least one of R10 to R12 is a phenyl group or a hydrocarbon group having two to five carbon atoms, or at least one of R13 to R16 is a phenyl group or a hydrocarbon group having two to five carbon atoms, and for the second silica-containing porous material, none of R10 to R12 are a hydrocarbon group having two or more carbon atoms or none of R13 to R16 are a hydrocarbon group having two or more carbon atoms.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first film formed on a surface of said semiconductor substrate and made of a first silica-containing porous material;
- and
- a second film in direct contact with said first film and made of a second silica-containing porous material,
- wherein the first and second silica-containing porous materials contain siloxane resin expressed by a general chemical formula of:
- (R10 to R12 represent hydrogen, oxygen or a monovalent hydrocarbon group, n1 represents an integer of 5 to 200, and X represents hydrogen or silicon), or:
- (R13 to R16 represent hydrogen, fluorine or a monovalent hydrocarbon group, n2 is an integer of 5 to 100, wherein at least one of R13 to R16 is hydrogen),
- for the first silica containing porous material, at least one of R10 to R12 is a phenyl group or a hydrocarbon group having two to five carbon atoms or at least one of R13 to R16 is a phenyl group or a hydrocarbon group having two to five carbon atoms, and for the second silica-containing porous material, none of R10 to R12 are a hydrocarbon group having two or more carbon atoms or none of R13 to R16 are a hydrocarbon group having two or more carbon atoms.
5 more elements
Dependencies are inferred from the claim text.