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US 6,958,512 B1Granted
Non-volatile memory device
AssigneeAdvanced Micro Devices, Inc.
InventorsYider Wu, Shibly S. Ahmed, Haihong Wang, Bin Yu
Life of this patent
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Abstract
A non-volatile memory device includes a substrate, an insulating layer, a fin, a conductive structure and a control gate. The insulating layer may be formed on the substrate and the fin may be formed on the insulating layer. The conductive structure may be formed near a side of the fin and the control gate may be formed over the fin. The conductive structure may act as a floating gate electrode for the non-volatile memory device.
Claims21
A memory device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a fin structure formed on the insulating layer, the fin structure functioning as a substrate electrode for the memory device;
- at least one conductive structure formed near a side of the fin structure, the at least one conductive structure acting as a floating gate electrode for the memory device;
- and
- a control gate formed over the fin structure.
3 more elements
A non-volatile memory device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a conductive fin formed on the insulating layer, the conductive fin functioning as a substrate electrode;
- a dielectric formed adjacent at least side surfaces of the fin;
- at least one conductive structure formed adjacent the dielectric, the at least one conductive structure acting as a floating gate electrode for the non-volatile memory device;
- and
- a gate formed over the dielectric and the at least one conductive structure, wherein the gate acts as a control gate for the non-volatile memory device.
4 more elements
A non-volatile memory array, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a plurality of conductive fins formed on the insulating layer, the conductive fins acting as substrate electrodes for the non-volatile memory array;
- a dielectric formed adjacent side surfaces and over a top surface of each of the plurality of conductive fins;
- a plurality of conductive structures formed near side surfaces of each of the plurality of conductive fins and adjacent the dielectric, the plurality of conductive structures acting as floating gate electrodes for the non-volatile memory array;
- and
- a plurality of gates formed over the plurality of fins and the plurality of conductive structures, the plurality of gates acting as word lines for the non-volatile memory array.
4 more elements
Dependencies are inferred from the claim text.