Contact-making structure for a ferroelectric storage capacitor and method for fabricating the structure

A memory component, comprising:

• a substrate;
• a switching transistor formed on said substrate;
• an insulation layer applied to said switching transistor;
• a contact-making structure formed in said insulation layer;
• and
• a storage capacitor formed on said contact-making structure;
• said insulation layer having a surface;
• said contact-making structure including a plug formed of polycrystalline silicon and is set back from said surface of said insulation layer;
• and
• said contact-making structure including a conductive, oxidizable interlayer and a conductive oxygen barrier layer that are deposited on said plug such that said interlayer is completely surrounded by said plug, said insulation layer and said barrier layer, said conductive oxygen barrier layer having an upper surface forming a planar surface with said surface of said insulation layer and completely filling in said contact-making structure.

A method for fabricating a contact-making structure used for making contact between a ferroelectric memory capacitor and a switching transistor located at opposite sides of an insulation layer, the method which comprises:

• a) forming a contact hole in an insulation layer having a surface;
• b) filling the contact hole with a plug of electrically conductive material up to a height that is set back from the surface of the insulation layer;
• and
• c) depositing a conductive, oxidizable interlayer to cover an inner wall of an upper, unfilled section of the contact hole except for an upper, encircling edge section and then depositing a conductive oxygen barrier layer in the contact hole such that the interlayer is completely surrounded by the plug, the insulation layer and the barrier layer, the conductive oxygen barrier layer having an upper surface forming a planar surface with the surface of the insulation layer and completely filling in the contact hole.

A method for fabricating a contact-making structure used for making contact between a ferroelectric memory capacitor and a switching transistor located at opposite sides of an insulation layer, the method which comprises:

• a) forming a contact hole in an insulation layer having a surface;
• b) filling the contact hole with a plug formed of polycrystalline silicon up to a height that is set back from the surface of the insulation layer;
• and
• c) depositing a conductive, oxidizable interlayer and a conductive oxygen barrier layer in the contact hole such that the interlayer is completely surrounded by the plug, the insulation layer and the barrier layer, the conductive oxygen barrier layer having an upper surface forming a planar surface with the surface of the insulation layer and completely filling in the contact hole.

A method for fabricating a memory component, which comprises:

• forming a switching transistor on a substrate;
• applying an insulation layer to the switching transistor, the insulation layer having a surface;
• forming a contact-making structure on the insulation layer by performing the following steps:
• a) forming a contact hole in the insulation layer,
• b) filling the contact hole with a plug formed of polycrystalline silicon up to a height that is set back from the surface of the insulation layer, and
• c) depositing a conductive, oxidizable interlayer and a conductive oxygen barrier layer in the contact hole such that the interlayer is completely surrounded by the plug, the insulation layer and the barrier layer, the conductive oxygen barrier layer having an upper surface forming a planar surface with the surface of the insulation layer and completely filling in the contact hole;
• and
• forming a storage capacitor, selected from the group consisting of a ferroelectric storage capacitor and a paraelectric storage capacitor, on the contact-making structure.