Light-emitting apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSatoru Okamoto, Shigeharu Monoe, Takashi Yokoshima
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Abstract
A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).
Claims33
A light-emitting device comprising
- a first electrode connected to a thin film transistor formed over a substrate having an insulating surface;
- an insulator covering an edge portion of the first electrode;
- a layer containing an organic compound formed on the first electrode;
- and
- a second electrode formed on the layer containing the organic compound,
- wherein the first electrode includes an edge portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a central portion comprising the first layer and the second layer,
- wherein the first electrode has an inclined plane between the edge portion and the central portion, and
- wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum or aluminum containing titanium, and the fourth layer comprises titanium.
A light-emitting device comprising:
- a first electrode connected to a thin film transistor formed over a substrate having an insulating surface;
- an insulator covering an edge portion of the first electrode;
- a layer containing an organic compound formed on the first electrode;
- and
- a second electrode formed on the layer containing the organic compound,
- wherein the first electrode includes an edge portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a central portion comprising the first layer and the second layer,
- wherein the first electrode has an inclined plane between the edge portion and the central portion,
- wherein the inclined plane comprises the third layer and the fourth layer,
- wherein the second layer is exposed at a surface of the central portion, and
- wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum or aluminum containing titanium, and the fourth layer comprises titanium.
A light-emitting device comprising
- a first electrode connected to a thin film transistor formed over a substrate having an insulating surface;
- an insulator covering an edge portion of the first electrode;
- a layer containing an organic compound formed on the first electrode;
- and
- a second electrode formed on the layer containing the organic compound,
- wherein the first electrode includes a first portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a second portion comprising the first layer and the second layer,
- wherein the first electrode has an inclined plane between the first portion and the second portion, and
- wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum, and the fourth layer comprises titanium.
A light-emitting device comprising:
- a first electrode connected to a thin film transistor formed over a substrate having an insulating surface;
- an insulator covering an edge portion of the first electrode;
- a layer containing an organic compound formed on the first electrode;
- and
- a second electrode formed on the layer containing the organic compound,
- wherein the first electrode includes a first portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a second portion comprising the first layer and the second layer,
- wherein the first electrode has an included plane between the first portion and the second portion,
- wherein the inclined plane comprises the third layer and the fourth layer, and
- wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum, and the fourth layer comprises titanium.
A light-emitting device comprising
- a first electrode connected to a thin film transistor formed over a substrate having an insulating surface;
- an insulator covering an edge portion of the first electrode;
- a layer containing an organic compound formed on the first electrode;
- and
- a second electrode formed on the layer containing the organic compound,
- wherein the first electrode includes a first portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a second portion comprising the first layer and the second layer,
- wherein the layer containing the organic compound is formed in contact with the second layer,
- wherein the first electrode has an inclined plane between the first portion and the second portion, and
- wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum, and the fourth layer comprises titanium.
A light-emitting device comprising:
- a first electrode connected to a thin film transistor formed over a substrate having an insulating surface;
- an insulator covering an edge portion of the first electrode;
- a layer containing an organic compound formed on the first electrode;
- and
- a second electrode formed on the layer containing the organic compound,
- wherein the first electrode includes a first portion comprising a first layer, a second layer, a third layer, and a fourth layer, and a second portion comprising the first layer and the second layer,
- wherein the layer containing the organic compound is formed in contact with the second layer,
- wherein the first electrode has an inclined plane between the first portion and the second portion,
- wherein the inclined plane comprises the third layer and the fourth layer, and
- wherein the first layer comprises titanium, the second layer comprises titanium nitride, the third layer comprises aluminum, and the fourth layer comprises titanium.
Dependencies are inferred from the claim text.