Electro-optical device

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein said first transistor has a gate electrode electrically connected to an i-th gate signal line and impurity regions, one of said impurity regions electrically connected to a corresponding source signal line, and
• wherein said second transistor has impurity regions, one of said impurity regions electrically connected to one of said plurality of gate signal lines and another one of said impurity regions electrically connected to an electrode of said EL element, and
• wherein an electric current applied to said EL element corresponding to said i-th gate signal line is supplied through one of said plurality of gate signal lines electrically connected to one of impurity regions of said second transistor.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein said first transistor has a gate electrode electrically connected to an i-th gate signal line and impurity regions, one of said impurity regions electrically connected to a corresponding source signal line, and
• wherein said second transistor has impurity regions, one of said impurity regions electrically connected to one of said plurality of gate signal lines and another one of said impurity regions electrically connected to an electrode of said EL element, and
• wherein said i-th gate signal line has a function for controlling operations of pixels, each of said pixels having a switching element electrically connected to said i-th gate signal line and a function as an electric current supply line for pixels, each of said pixels having a second transistor electrically connected to said i-th gate signal line.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion, comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein said first transistor has a gate electrode electrically connected to an i-th gate signal line and impurity regions, one of said impurity regions electrically connected to a corresponding source signal line, and
• wherein said second transistor has impurity regions, one of said impurity regions electrically connected to one of said plurality of gate signal lines except for said i-th gate signal line and another one of said impurity regions electrically connected to an electrode of said EL element.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion, comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein said first transistor has a gate electrode electrically connected to an i-th gate signal line and impurity regions, one of said impurity regions electrically connected to a corresponding source signal line, and
• wherein said second transistor has impurity regions, one of said impurity regions electrically connected to an (i−1)-th gate signal line and another one of said impurity regions electrically connected to an electrode of said EL element.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion, comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein a signal is inputted from a source signal line to said second transistor through said first transistor, and
• wherein an electric current is supplied from one of said plurality of said gate signal lines to said EL element through said second transistor.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and pixel portion, comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein a signal is inputted from a corresponding source signal line to said second transistor through said first transistor having a gate electrode electrically connected to an i-th gate signal line, and
• wherein an electric current is supplied from one of said plurality of gate signal lines except for said i-th gate signal line to said EL element through said second transistor.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion, comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having at least a first transistor, a second transistor and an EL element;
• wherein a signal is inputted from a source signal line to said second transistor through said first transistor having a gate electrode electrically connected an i-th gate signal line, and
• wherein an electric current is supplied from an (i−1)-th gate signal line to said EL element through said second transistor.

A semiconductor device having a source signal line side driving circuit, a gate signal line side driving circuit and a pixel portion, comprising:

• a plurality of source signal lines connected to said source signal line side driving circuit;
• a plurality of gate signal lines connected to said gate signal line side driving circuit;
• a plurality of pixels arranged in a matrix-form in said pixel portion, each of pixels having two first transistors connected in series, a second transistor and an EL element;
• wherein each of said two first transistors has a gate electrode electrically connected to a the gate signal line, one of said two first transistors has impurity regions, one of said impurity regions electrically connected to a corresponding source signal line, and
• wherein said second transistor has a gate electrode electrically connected to one of impurity regions of another one of said two first transistors, impurity regions, one of said impurity regions electrically connected to (i−1)-th gate signal line and another one of said impurity regions electrically connected to an electrode of said EL element.