Atomic layer deposited Zr-Sn-Ti-O films using TiI4

A method of forming a dielectric film comprising:

• depositing titanium and oxygen onto a surface by atomic layer deposition using a TiI4 precursor;
• depositing zirconium and oxygen onto the surface by atomic layer deposition including pulsing a zirconium iodine precursor;
• and
• depositing tin and oxygen onto the surface by atomic layer deposition including pulsing a tin iodine precursor.

A method of forming a dielectric film comprising:

• forming TiO2 onto a surface by atomic layer deposition using a TiI4 precursor;
• depositing zirconium and oxygen by atomic layer deposition including pulsing a zirconium iodine precursor following forming TiO2;
• and
• depositing tin and oxygen by atomic layer deposition including pulsing a tin iodine precursor following depositing zirconium and oxygen.

A method of forming a transistor comprising:

• forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
• forming a dielectric film containing Zr—Sn—Ti—O on the body region between the source and drain regions by atomic layer deposition using a TiI4 precursor and including pulsing a zirconium iodine precursor and a tin iodine precursor;
• and
• coupling a gate to the dielectric film.

A method of forming a transistor comprising:

• forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
• forming a dielectric film containing Zr—Sn—Ti—O on the body region between the source and drain regions by atomic layer deposition using a TiI4 precursor;
• and
• coupling a gate to the dielectric film, wherein forming a dielectric film containing Zr—Sn—Ti—O on the body region between the source and drain regions includes:
• depositing titanium and oxygen onto the body region by atomic layer deposition using a TiI4 precursor;
• depositing zirconium and oxygen onto the body region by atomic layer deposition using a zirconium halide precursor, wherein depositing zirconium and oxygen onto the body region by atomic layer deposition includes pulsing a ZrI4 precursor;
• and
• depositing tin and oxygen onto the body region by atomic layer deposition using a tin halide precursor.

A method of forming a transistor comprising:

• forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
• forming a dielectric film containing Zr—Sn—Ti—O on the body region between the source and drain regions by atomic layer deposition using a TiI4 precursor;
• and
• coupling a gate to the dielectric film, wherein forming a dielectric film containing Zr—Sn—Ti—O on the body region between the source and drain regions includes:
• depositing titanium and oxygen onto the body region by atomic layer deposition using a TiI4 precursor;
• depositing zirconium and oxygen onto the body region by atomic layer deposition using a zirconium halide precursor, wherein depositing zirconium and oxygen onto the body region by atomic layer deposition includes pulsing a ZrI4 precursor;
• and
• depositing tin and oxygen onto the body region by atomic layer deposition using a tin halide precursor.

A method of forming a memory array comprising:

• forming a number of access transistors, at least one of the access transistors including a dielectric film containing Zr—Sn—Ti—O on a body region between a source region and a drain region, the dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor;
• forming a number of word lines coupled to a number of the gates of the number of access transistors;
• forming a number of source lines coupled to a number of the source regions of the number of access transistors;
• and
• forming a number of bit lines coupled to a number of the drain regions of the number of access transistors.

A method of forming a memory array comprising:

• forming a number of access transistors, at least one of the access transistors including a dielectric film containing Zr—Sn—Ti—O on a body region between a source region and a drain region, the dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor including pulsing a zirconium iodine precursor and a tin iodine precursor;
• forming a number of word lines coupled to a number of the gates of the number of access transistors;
• forming a number of source lines coupled to a number of the source regions of the number of access transistors;
• and
• forming a number of bit lines coupled to a number of the drain regions of the number of access transistors.