Back to results
US 6,958,301 B2Granted
Method for forming Ta2O5 dielectric layer by using in situ N2O plasma treatment
AssigneeHynix Semiconductor Inc.
InventorsKyong-Min Kim, Han-Sang Song
Life of this patent
Estimating the term…
Abstract
A method for forming a Ta2O5 dielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a Ta2O5 dielectric layer on a substrate; b) performing a plasma treatment using N2O gas; c) repeating the steps of a) and b) at least one time; and d) annealing the Ta2O5 dielectric layer for the crystallization of the Ta2O5 dielectric layer.
Claims10
A method for forming a Ta2O5 dielectric layer, comprising:
- a) depositing a mono-atomic Ta2O5 layer on a substrate prepared in a chamber;
- b) performing a nitrogen plasma treatment using N2O gas plasma on said mono-atomic Ta2O5 layer;
- c) repeating the steps of a) followed by b) at least one time to form a plurality of mono-atomic Ta2O5 layers as a Ta2O5 dielectric layer;
- and
- d) annealing the Ta2O5 dielectric layer in a N2O gas atmosphere or an O2 gas atmosphere for crystallization of the Ta2O5 dielectric layer.
2 more elements
Dependencies are inferred from the claim text.