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US 6,958,300 B2Granted
Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
AssigneeMicron Technology, Inc.
InventorsBrian A. Vaartstra, Donald L. Westmoreland
Life of this patent
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Abstract
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.
Claims30
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- each R1 is independently an organic group;
- R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- and
- contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process,
- wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.
12 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- each R1 is independently an organic group;
- R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly,
- wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
13 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- each R1 is independently an organic group;
- R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process,
- wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.
12 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- each R1 is independently an organic group;
- R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate,
- wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
13 more elements
A method of manufacturing a memory device structure comprising:
- providing a substrate having a first electrode thereon;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- each R1 is independently an organic group;
- R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer,
- wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
14 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- and
- contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process,
- wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.
11 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly,
- wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
12 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process,
- wherein the vapor deposition process is an atomic layer deposition process comprising a plurality of deposition cycles.
11 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate,
- wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
12 more elements
A method of manufacturing a memory device structure comprising:
- providing a substrate having a first electrode thereon;
- providing at least one precursor compound of the formula M1q(O)x(OR1)y (Formula I) and at least one precursor compound of the formula M2(NR2)w(NR3R4)z (Formula II), wherein:
- M1 and M2 are the same metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- x is 0 to 4;
- y is 1 to 8;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 or 2;
- and
- x, y, z, and w are dependent on the oxidation states of M1 and M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer,
- wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
13 more elements
Dependencies are inferred from the claim text.