Method of manufacturing integrated circuit
AssigneeRenesas Technology Corp.
InventorsNorio Hasegawa, Joji Okada, Toshihiko Tanaka, Kazutaka Mori, Ko Miyazaki
Life of this patent
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Abstract
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
Claims8
A method of manufacturing a semiconductor integrated circuit device, comprising a step of transferring patterns onto a resist film formed on a main surface of a semiconductor wafer by an exposure process using a photomask, the photomask having on a main surface of a mask substrate a halftone pattern formed of a resist film and a light shielding portion formed of a metal, wherein in the photomask, the halftone pattern is formed flush with the light shielding portion.
A method of manufacturing a semiconductor integrated circuit device, comprising a step of transferring patterns onto a resist film formed on a main surface of a semiconductor wafer by an exposure process using a photomask, the photomask having on a main surface of a mask substrate a halftone pattern formed of a resist film and a light shielding portion formed of a metal, wherein transmittance of light through said halftone pattern of said photomask is 1%-40% in terms of light intensity of the exposure light irradiated thereon, the halftone pattern inverting phase of light passing therethrough as compared with a phase of light passing through a halftone film-free portion of the photomask.
A method of manufacturing a semiconductor integrated circuit device, comprising a step of transferring patterns onto a resist film formed on a main surface of a semiconductor wafer by an exposure process using a photomask, the photomask having on a main surface of a mask substrate a halftone pattern formed of a resist film and a light shielding portion formed of a metal, wherein the photomask further includes a phase adjusting film between the halftone pattern and the mask substrate, said phase adjusting film not being exposed directly to the exposure light.
A method of manufacturing a semiconductor integrated circuit device, comprising a step of transferring patterns onto a resist film formed on a main surface of a semiconductor wafer by an exposure process using a photomask, the photomask having on a main surface of a mask substrate a halftone pattern formed of a resist film and a light shielding portion formed of a metal, wherein said resist film, of which the halftone pattern of the photomask is formed, is made of an organic resist material.
Dependencies are inferred from the claim text.