Method and apparatus for improving adhesion between layers in integrated devices
AssigneeTexas Instruments Incorporated
InventorsRichard A. Faust, Jr., Qing-Tang Jiang, Jiong-Ping Lu
Life of this patent
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Abstract
In an integrated device, a via is formed in a substrate layer and a barrier layer is formed on the substrate layer in the via. A seed layer is formed on the barrier layer in the via. The seed layer includes a first material and a second material. The first material provides an ability for the second material to maintain an adherence to the barrier layer.
Claims24
A method for improving adhesion between layers, comprising:
- forming a via in a substrate layer;
- forming a barrier layer on the substrate layer in the via;
- forming a seed layer on the barrier layer in the via, the seed layer including a first material and a second material, the first material providing an ability for the second material to maintain an adherence to the barrier layer.
A method for improving adhesion between layers, comprising:
- forming a via in a substrate layer;
- forming a barrier layer on the substrate layer in the via;
- forming a seed layer on the barrier layer in the via, the seed layer including a first material and a second material, the first material providing an ability for the second material to maintain an adherence to the barrier layer wherein forming the seed layer includes introducing a silicon-containing gas as the first material to the second material during formation.
A method for improving adhesion between layers, comprising:
- forming a via in a substrate layer;
- forming a barrier layer on the substrate layer in the via;
- forming a seed layer on the barrier layer in the via, the seed layer including a first material and a second material, the first material providing an ability for the second material to maintain an adherence to the barrier layer wherein forming the seed layer includes co-depositing a concentration of silicon as the first material with a conductive metal as the second material, the concentration of silicon great enough to increase adhesion between the seed layer and the barrier layer.
An apparatus for improving adhesion between layers, comprising:
- a substrate layer having a via;
- a barrier layer formed on the substrate layer in the via;
- a seed layer formed on the barrier layer in the via, the seed layer including a first material and a second material, the first material providing an ability for the second material to maintain an adherence to the barrier layer.
A method for improving adhesion between layers, comprising:
- forming a via in a substrate layer, the substrate layer including a dielectric material;
- forming a barrier layer on the substrate layer in the via, the barrier layer including a substantially non-conductive material;
- forming a seed layer on the barrier layer in the via, the seed layer including silicon and copper, the silicon providing an ability for the copper to adhere to the barrier layer, the barrier layer operable to:
- separate the seed layer from the substrate layer;
- substantially resist diffusion of the copper through the barrier layer into the substrate layer.
Dependencies are inferred from the claim text.