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US 6,958,282 B1Granted
SOI semiconductor configuration and method of fabricating the same
AssigneeSiemens Aktiengesellschaft
InventorsThomas Huttner, Helmut Wurzer, Reinhard Mahnkopf
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Abstract
A semiconductor configuration has a base layer made of semiconductor material and formed, in particular, by a substrate. An insulation layer is arranged above the base layer, and a layer made of monocrystalline silicon adjoins the insulation layer. A passivating substance is present, with the formation of Si—X bonds, in the region of the interface between the insulation layer and the monocrystalline silicon layer. The bond energy of the Si—X bond is greater than the bond energy of an Si—H bond.
Claims10
A method of fabricating a semiconductor configuration, which comprises the following steps:
- fabricating a semiconductor structure having a base layer, an insulation layer, a monocrystalline silicon layer, and an interface between the insulation layer and the monocrystalline silicon layer;
- placing a passivating substance X into the monocrystalline silicon layer, during or after the fabrication of the semiconductor structure;
- and
- heat-treating the semiconductor structure with the passivating substance X for causing the passivating substance X in the monocrystalline silicon layer to diffuse both to the interface and to a surface of the monocrystalline silicon layer opposite to the interface.
1 more element
Dependencies are inferred from the claim text.