Semiconductor devices and methods for fabricating the same
AssigneeDongbuAnam Semiconductor Inc.
InventorKi-Min Lee
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Abstract
Semiconductor devices having a dual gate and method for fabricating the same are disclosed. A disclosed example method comprises: forming dummy gates in a semiconductor substrate; sequentially forming a lightly doped drain (LDD) region, a spacer and a source/drain; depositing an insulation film above the semiconductor substrate; exposing the dummy gates by planarizing the insulation film; removing the dummy gates; selectively injecting impurities into a region associated with at least one of the removed dummy gates; forming gate oxide films having different thicknesses on the regions associated with the removed dummy gates; depositing a polysilicon layer above the gate oxide films; and then forming polysilicon gates by planarizing the polysilicon layer.
Claims12
A method for fabricating a semiconductor device, comprising:
- forming first and second dummy gates in a semiconductor substrate;
- forming a lightly doped drain (LDD), a spacer and a source/drain;
- depositing an insulation film above the semiconductor substrate;
- exposing the first and second dummy gates by planarizing the insulation film;
- removing the first and second dummy gates;
- selectively injecting impurities into a region associated with the first dummy gate;
- forming a first gate oxide film having a first thickness in the region associated with the first dummy gate and forming a second gate oxide film having a second thickness in a region associated with the second dummy gate, the first thickness being different than the second thickness;
- depositing a polysilicon layer above the first and second gate oxide films;
- and
- forming first and second polysilicon gates by planarizing the polysilicon layer.
Dependencies are inferred from the claim text.