Method of fabricating a dual-level stacked flash memory cell with a MOSFET storage transistor
AssigneeAdvanced Micro Devices, Inc.
InventorsJames Pan, Ning Cheng, Christy Mein Chu Woo
Life of this patent
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Abstract
The present invention relates to methods of fabricating dual-level flash memory cells. A first active region and a second active region are formed in a substrate. A trench is formed in the substrate between the first active region and the second active region. A first insulator dielectric is formed on the substrate and within the trench forming a vertical structure. A first poly layer is formed on the first insulator dielectric. A second insulator dielectric is formed on at least a portion of the first poly layer. A second poly layer is formed on the second insulator dielectric.
Claims5
A method of fabricating a dual level memory cell comprising:
- forming a first active region and a second active region in a substrate;
- forming a trench in the substrate between the first active region and the second active region;
- forming a first insulator dielectric on the substrate that forms a vertical structure within the trench;
- forming a first poly layer on the first insulator;
- forming a second insulator dielectric on at least a portion of the first poly layer;
- and
- forming a second poly layer on the second insulator dielectric.
A method of fabricating a dual level memory cell comprising:
- forming a first active region and a second active region in a substrate;
- forming a first insulator dielectric on the substrate;
- forming a first poly layer on the first insulator dielectric;
- forming a second insulator dielectric on at least a portion of the first poly layer;
- and
- forming a second poly layer on the second insulator dielectric;
- forming a trench in the substrate between the first active region and the second active region prior to forming the first insulator dielectric such that a vertical structure is formed by the first insulator dielectric;
- and
- wherein the vertical structure is V-shaped.
Dependencies are inferred from the claim text.