Process for the back-surface grinding of wafers

Process for back-surface grinding of wafers, comprising the following steps:

• a) applying a film, which has a support layer and an adhesion layer, by means of the adhesion-layer side, to the wafer front surface, the film being applied to the wafer front surface by lamination, the adhesion layer matching semiconductor topography structures and/or contact bumps situated on the wafer surface, while the support layer, on the rear side, runs plane-parallel to the wafer surface;
• b) carrying out a first photochemically initiated partial polymerization in the adhesion layer, with the result that the adhesion layer adopts an elastic behavior as a result of the first partial polymerization and the adhesion between adhesion layer and wafer surface is reinforced;
• c) grinding the wafer back surface,
• d) carrying out a second partial polymerization in the adhesion layer, with the result that the adhesion between the adhesion layer and the wafer surface is reduced;
• and
• e) pulling the film off the wafer front surface.