Process for deposition of semiconductor films
AssigneeASM America, Inc.
InventorMichael A. Todd
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Abstract
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, higher order silanes are employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Claims29
A process for depositing a non-single crystalline SiGe-containing material onto a surface, comprising:
- providing a chemical vapor deposition chamber having disposed therein a substrate;
- introducing a gas comprised of a higher-order silane of the formula SinH2n+2 and a germanium precursor to the chamber, wherein n=3-6;
- and
- depositing a non-single crystalline SiGe-containing film onto the substrate.
A process for making a graded SiGe-containing film, comprising:
- providing a substrate disposed within a CVD chamber;
- and
- depositing a graded SiGe-containing film onto the substrate by thermal CVD using a deposition gas comprising trisilane and a germanium precursor.
Dependencies are inferred from the claim text.