Methods of forming magnetoresistive memory devices

A method of forming a magnetoresistive memory device, comprising:

• forming a bitline assembly extending in a first direction, the bitline assembly comprising a conductive core and a magnetic structure around the conductive core, the magnetic structure comprising one or more magnetic materials;
• forming a plurality of spaced bit regions along the bitline assembly, the bit regions comprising segments of the magnetic structure and being separated from one another by gap regions along the bitline assembly;
• and
• forming openings within the gap regions which extend through the magnetic structure to the conductive core.

A method of forming a magnetoresistive memory device, comprising:

• forming a trench in an insulative material;
• partially filling the trench with a first magnetic material to narrow the trench, the first magnetic material being primarily composed of cobalt, chromium and niobium;
• at least partially filing the narrowed trench with a conductive material which is in direct physical contact with the first magnetic material, the conductive material comprising one or more of copper, aluminum and silver;
• and
• forming a second magnetic material over the conductive material, the second magnetic material being in direct physical contact with both the conductive material and the first magnetic material, the second magnetic material being primarily composed of one or both of iron and nickel.

A method of forming a plurality of magnetoresistive memory devices, comprising:

• forming a bitline assembly extending in a first direction, the bitline assembly comprising a conductive core and a magnetic structure around the conductive core, the magnetic structure comprising one or more magnetic materials;
• forming a non-magnetic layer over the bitline assembly;
• forming a reference magnetic material over the non-magnetic layer;
• incorporating the bitline assembly into sense portions of magnetoresistive memory devices;
• and
• forming a plurality of wordlines over the reference magnetic material and in one-to-one correspondence with said sense portions of the magnetoresistive memory devices, the individual wordlines comprising an antiferromagnetic pinning layer extending continuously along a conductive material, the antiferromagnetic pinning layers of the individual wordlines being proximate the reference magnetic material to operatively pin a magnetic orientation within said reference magnetic material.

A method of forming a magnetoresistive memory devices, comprising:

• forming a trench in an insulative material;
• partially filling the trench with a first magnetic material to narrow the trench;
• forming a first conductive material within the narrowed trench and in direct physical contact with the first magnetic material, the first conductive material extending along a first direction and being a bitline core;
• forming a second magnetic material over and in direct physical contact with the conductive material;
• forming a non-magnetic layer over the second magnetic material;
• forming a third magnetic material over the non-magnetic layer;
• incorporating the first and second magnetic materials, together with the first conductive material, into a sense portion of the magnetoresistive memory device;
• incorporating the third magnetic material into a reference portion of the magnetoresistive memory device;
• and
• forming a wordline extending substantially orthogonally to the first direction, the wordline comprising an antiferromagnetic pinning layer and a second conductive material;
• the antiferromagnetic pinning layer being proximate the reference portion of the magnetoresistive memory device to operatively pin a magnetic orientation within said reference portion.