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US 6,958,194 B1Granted
Imager with improved sensitivity
AssigneeFoveon, Inc.
InventorsPeter J. Hopper, Philipp Lindorfer, Michael Mian, Robert Drury
Life of this patent
Estimating the term…
Abstract
An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.
Claims29
An imager comprising:
- a first region of semiconductor material, the first region of semiconductor material having a first conductivity type, the first semiconductor region being free of germanium;
- a second region of semiconductor material located on the first region of semiconductor material, the second region of semiconductor material having a second conductivity type, the second semiconductor region being free of germanium;
- and
- a third region of semiconductor material located on the second region of semiconductor material, the third region of semiconductor material including silicon and germanium and having the second conductivity type.
1 more element
An imager comprising:
- a first region of semiconductor material, the first region of semiconductor material having a first conductivity type;
- a second region of semiconductor material located on the first region of semiconductor material, the second region of semiconductor material having a second conductivity type;
- a third region of semiconductor material located on the second region of semiconductor material, the third region of semiconductor material including silicon and germanium and having the second conductivity type;
- and
- a fourth region of semiconductor material located on the third region of semiconductor material, the fourth region of semiconductor material having the second conductivity type and being free of germanium.
2 more elements
An imager comprising:
- a first region of semiconductor material, the first region of semiconductor material having a first conductivity type;
- a second region of semiconductor material located on the first region of semiconductor material, the second region of semiconductor material having a second conductivity type;
- a third region of semiconductor material located on the second region of semiconductor material, the third region of semiconductor material including silicon and germanium and having the second conductivity type;
- a fourth region of semiconductor material located on the third region of semiconductor material, the fourth region of semiconductor material having the second conductivity type and being free of germanium;
- a fifth region of semiconductor material located on the fourth region of semiconductor material, the fifth region of semiconductor material having the first conductivity type;
- a sixth region of semiconductor material located on the fifth region of semiconductor material, the fifth region of semiconductor material having the second conductivity type;
- and
- a seventh region of semiconductor material located on the sixth region of semiconductor material, the seventh region of semiconductor material including silicon and germanium and having the second conductivity type.
5 more elements
A method of forming an imager, the method comprising the steps of:
- forming a first region of semiconductor material, the first region of semiconductor material having a first conductivity type and being free of germanium;
- and
- forming a second region of semiconductor material on the first region of semiconductor material, the second region of semiconductor material having a second conductivity type and being free of germanium;
- and
- forming a third region of semiconductor material on the second region of semiconductor material, the third region of semiconductor material including silicon and germanium and having the second conductivity type.
2 more elements
An imager, comprising:
- a first region of semiconductor material, the first region of semiconductor material having a first conductivity type and being free of germanium;
- a second region of semiconductor material on the first region of semiconductor material, the second region of semiconductor material having a second conductivity type and being free of germanium.
Dependencies are inferred from the claim text.