Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
AssigneeApplied Materials, Inc.
InventorsM. Ziaul Karim, Farhad K. Moghadam, Siamak Salimian
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Abstract
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
Claims11
A method for depositing silicon oxide on a substrate disposed in a process chamber, the method comprising
- flowing a process gas comprising H2, a silicon source, and an oxidizing gas reactant comprising hydrogen peroxide or H2O into the process chamber;
- forming a plasma having an ion density of at least 1011 ions/cm3 from the process gas;
- and
- depositing the silicon oxide within a gap in the substrate having an aspect ratio of at least 4:1 with the plasma using a process that has simultaneous deposition and sputtering components,
- wherein the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
Dependencies are inferred from the claim text.