Micromechanical piezoelectric device
AssigneeBoston MicroSystems, Inc.
InventorsRichard Mlcak, Dharanipal Doppalapudi, Harry L. Tuller
Life of this patent
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Abstract
A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.
Claims33
A micromechanical device comprising:
- a single crystal micromachined micromechanical structure, at least a portion of the micromechanical structure capable of performing a mechanical motion;
- and
- a piezoelectric epitaxial layer covering at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion, the micromechanical structure and piezoelectric epitaxial layer being composed of different materials;
- and
- at least one electrically conductive layer covering at least part of the piezoelectric epitaxial layer.
The device of claim 10 further comprising a substance sensitive layer over at least a portion of the micromechanical structure that is capable of performing a mechanical motion.
A micromechanical device comprising:
- a single crystal micromachined micromechanical structure formed from a material selected from the group consisting of SiC and Si, at least a portion of the micromechanical structure capable of performing a mechanical motion;
- and
- a piezoelectric epitaxial layer covering at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion, the piezoelectric epitaxial layer being formed of AlGaInN solid solution;
- and
- at least one electrically conductive layer covering at least part of the piezoelectric epitaxial layer.
A micromechanical device comprising:
- a single crystal micromachined micromechanical structure formed from a material selected from the group consisting of 6H—SiC, 4H—SiC and (111) Si, at least a portion of the micromechanical structure capable of performing a mechanical motion;
- and
- a piezoelectric epitaxial layer covering at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion, the piezoelectric epitaxial layer being formed of AlGaInN solid solution;
- and
- at least one electrically conductive layer covering at least part of the piezoelectric epitaxial layer.
Dependencies are inferred from the claim text.