Method for fabricating a semiconductor device by transferring a layer to a support with curvature

A method for fabricating a semiconductor device comprising:

• preparing a support with curvature;
• preparing a transfer object with curvature;
• forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
• bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;
• peeling the layer containing the device bonded with the support from the substrate by physical means;
• and
• bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,
• wherein the support bonded with the layer containing the device returns into a shape after preparing the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means.

A method for fabricating a semiconductor device comprising:

• preparing a support with curvature;
• preparing a transfer object with curvature;
• forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
• bonding the support with curvature to the layer containing the device;
• peeling the layer containing the device bonded with the support from the substrate;
• and
• bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,
• wherein the support bonded with the layer containing the device returns into a curved shape by restoring force after peeling the layer containing the device bonded with the support from the substrate.

A method for fabricating a semiconductor device comprising:

• preparing a support with curvature;
• preparing a transfer object with curvature;
• forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
• bonding the support with curvature to the layer containing the device;
• peeling the layer containing the device bonded with the support from the substrate;
• and
• bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object.