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US 6,952,020 B1Granted
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuyuki Arai, Jun Koyama
Life of this patent
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Abstract
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
Claims7
A semiconductor device comprising:
- a pixel TFT disposed in a pixel section over a substrate;
- and
- a driver circuit comprising a p-channel TFT and an n-channel TFT, over the substrate;
- a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT;
- a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film;
- and
- a pixel electrode having a light reflective surface over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films,
- wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region,
- wherein the p-channel TFT of the driver circuit does not have a LDD region,
- wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region,
- wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region.
8 more elements
A semiconductor device comprising:
- a pixel TFT disposed in a pixel section over a first substrate;
- a driver circuit comprising a p-channel TFT and an n-channel TFT over the first substrate;
- a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT;
- a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film;
- and
- a pixel electrode having a light reflective surface over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films,
- at least one columnar spacer covering the opening;
- a second substrate having a transparent conductive film stuck to the first substrate through the at least one columnar spacer;
- and
- a liquid crystal sandwiched between the first and second substrates,
- wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region,
- wherein the p-channel TFT of the driver circuit does not have a LDD region,
- wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region,
- wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region.
11 more elements
A semiconductor device comprising:
- a pixel TFT having disposed in a pixel section over a substrate;
- a driver circuit comprising a p-channel TFT and an n-channel TFT over the substrate,
- a first interlayer insulating film comprising an inorganic insulating material formed over the pixel section;
- a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film;
- a pixel electrode having a light reflective surface over the second interlayer insulating film, and in connected to the pixel TFT through an opening formed in the first and second interlayer insulating films;
- a source wiring over the second interlayer insulating film;
- an alignment film formed over the pixel electrode and the source wiring;
- and
- a liquid crystal interposed between the alignment film and an opposed substrate,
- wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region,
- wherein the p-channel TFT of the driver circuit does not have a LDD region,
- wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region,
- wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region,
- wherein the pixel electrode and the source wiring are formed, simultaneously.
11 more elements
Dependencies are inferred from the claim text.