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US 6,946,683 B2Granted
Opposed terminal structure having a nitride semiconductor element
AssigneeNichia Corporation
InventorsMasahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
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Abstract
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
Claims13
An opposed terminal structure comprising:
- a supporting substrate having conductivity;
- a nitride semiconductor having a light-emitting layer;
- a first terminal formed on one face of the nitride semiconductor;
- and
- a second terminal formed on another face of the nitride semiconductor,
- wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches,
- wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor, and
- wherein the supporting substrate is formed of nitride semiconductor.
5 more elements
An opposed terminal structure comprising:
- a supporting substrate having conductivity;
- a first terminal disposed on one side of the supporting substrate;
- a nitride semiconductor having a light-emitting layer;
- and
- a second terminal forming an opposed terminal structure with the first terminal,
- wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches,
- wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor, and
- wherein the supporting substrate is formed of nitride semiconductor.
5 more elements
Dependencies are inferred from the claim text.