Method of peeling off and method of manufacturing semiconductor device

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate;
• heating said multilayer so that said second material layer has a compressive stress;
• and
• peeling said second material layer from said substrate after said heating step by physical means at an interface of said first material layer and said second material layer,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate;
• heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress;
• sticking a supporting body to said multilayer after said heating step;
• and
• peeling said second material layer from said substrate by physical means at an interface of said first material layer and said second material layers,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate;
• heating said multilayer so that said second material layer has a compressive stress;
• sticking a supporting body to said multilayer after said heating step;
• and
• peeling said second material layer from said substrate by physical means at an interface of said first material layer and said second material layers,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer over a substrate and a second material layer provided on said first material layer over said substrate;
• heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress;
• and
• peeling said second material layer from said substrate after said heating step by physical means,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer over a substrate and a second material layer on said first material layer over said substrate;
• heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress;
• sticking a supporting body to said multilayer after said heating step;
• and
• peeling said second material layer from said substrate by physical means,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer having a compressive stress over a substrate and a second material layer having a compressive stress provided on said first material layer over said substrate;
• heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress;
• and
• peeling said second material layer from said substrate after said heating step by physical means,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.

A method for peeling comprising the steps of:

• forming a multilayer composed of a first material layer having a tensile stress over a substrate and a second material layer having a compressive stress provided on said first material layer over said substrate;
• heating said multilayer so that said first material layer has a tensile stress and said second material layer has a compressive stress;
• and
• peeling said second material layer from said substrate after said heating step by physical means,
• wherein said second material layer has a compressive stress in a range of −1 to −1×1010 (Dyne/cm2) before said peeling step.