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US 6,946,197 B2Granted
Semiconductor and device nanotechnology and methods for their manufacture
AssigneeNanoProducts Corporation
InventorsTapesh Yadav, Dmitri Routkevitch, Peter Mardilovich, Alex Govyadinov, Stephanie Hooker, Stephen S. Williams
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Abstract
Device nanotechnology based on silicon wafers and other substrates is described. Methods for preparing such devices are discussed. The teachings allow integration of current semiconductor device, sensor device and other device fabrication methods with nanotechnology. Integration of nanotubes and nanowires to wafers is discussed. Sensors, electronics, biomedical and other devices are presented.
Claims19
A method for preparing a device comprising:
- providing a substrate;
- depositing a layer comprising metal on the substrate;
- processing the deposited layer into a substance comprising substantially parallel nanoscale pores;
- depositing a substance of first composition in the nanoscale pores;
- and
- providing at least one additional layer of second composition substantially perpendicular to the substance deposited in the nanoscale pores.
3 more elements
A method for preparing a device comprising:
- providing a wafer comprising silicon;
- depositing a layer on the wafer;
- processing the deposited layer Into a substance comprising substantially parallel nanoscale pores;
- preparing nanotubes or nanowires in the nanoscale pores;
- and
- providing at least one additional layer of second composition substantially perpendicular to the nanotubes.
3 more elements
Dependencies are inferred from the claim text.