Optical coupler having evanescent coupling region
AssigneeSiOptical, Inc.
InventorShrenik Deliwala
Life of this patent
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Abstract
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
Claims71
An apparatus for coupling light into/from a hybrid active electronic and optical circuit disposed at least in part in a Silicon-On-Insulator (SOI) wafer, the SOI wafer including an insulator layer and an upper silicon layer which includes a slab dielectric waveguide, the hybrid active electronic and optical circuit including an active electronic device and at least one optical device each of which is disposed at least in part in the upper silicon layer, the apparatus for coupling light comprising:
- an evanescent coupling region formed at least in part from a gap portion that couples an input/output light coupler using evanescent coupling to the slab dielectric waveguide;
- wherein the input/output light coupler is disposed proximate to an outer surface of the wafer;
- and
- wherein actuation of the electronic device varies a property of the at least one optical device which in turn varies an optical property of the slab dielectric waveguide.
An apparatus for coupling light into/from a hybrid active electronic and optical circuit, the hybrid active electronic and optical circuit formed at least in part in a Silicon-On-Insulator (SOI) wafer, the SOI wafer including an insulator layer and an upper silicon layer, the hybrid active electronic and optical circuit including an active electronic device and at least one optical device each of which is disposed at least in part in the upper silicon layer, the apparatus for coupling light comprising:
- an input/output light coupler disposed proximate to an outer surface of the wafer and associated with the at least one optical device;
- and
- a tapered evanescent coupling region formed at least in part from a gap portion that couples the input/output light coupler to the at least one optical device using evanescent coupling.
An assembly that couples light out of a hybrid active electronic and optical circuit disposed at least in part in a Silicon-On-Insulator (SOI) wafer having an upper silicon layer and a lower insulating layer, the apparatus comprising:
- a device portion including at least one optical device formed at least in part on the upper silicon layer;
- a light coupling portion producing a substantially Gaussian beam, thereby enhancing coupling efficiency to an external input or output light source;
- and
- an evanescent coupling region that optically couples the light coupling portion to a waveguide disposed at least in part in the upper silicon layer, wherein an intensity of the light in the waveguide, in cross section, is substantially uniform;
- and wherein the intensity of the light, in cross section, follows a substantially Gaussian curve as it exits said light coupling portion.
An assembly that couples light into a hybrid active electronic and optical circuit disposed at least in part in a Silicon-On-Insulator (SOI) wafer having an upper silicon layer and a lower insulating layer, the apparatus comprising:
- a device portion including at least one optical device formed at least in part on the upper silicon layer;
- a light coupling portion etched in the upper silicon layer, and
- an evanescent coupling region that optically couples the light coupling portion to a waveguide disposed at least in part in the upper silicon layer, wherein the intensity of the light, in cross section, follows a substantially Gaussian curve as it enters said light coupling portion, and wherein an intensity of the light in the waveguide, in cross section, has a substantially uniform intensity.
Dependencies are inferred from the claim text.