High performance p-type thermoelectric materials and methods of preparation
AssigneeCalifornia Institute of Technology
InventorsThierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial
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Abstract
The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
Claims1
A high performance p-type thermoelectric alloy having single phase and polycrystalline Zn4Sb3 material alloyed with Zn3.2Cd0.8Sb3.
Dependencies are inferred from the claim text.