Memory mapped monitoring circuitry for optoelectronic device

Circuitry for monitoring an optoelectronic device, comprising:

• memory, including one or more memory arrays for storing information related to the optoelectronic device;
• analog to digital conversion circuitry configured to receive a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, convert the received analog signals into digital values, and store the digital values in predefined locations within the memory;
• comparison logic configured to compare the digital values with limit values to generate flag values, wherein the flag values are stored in predefined flag storage locations within the memory during operation of the optoelectronic device;
• and
• an interface configured to enable a host to read directly from and write directly to locations within the memory, including the predefined flag storage locations, in accordance with commands received from the host;
• wherein the plurality of analog signals include laser bias current, laser output power, and received power.

A method of monitoring an optoelectronic device, comprising:

• receiving a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, converting the received analog signals into digital values, and storing the digital values in predefined locations within a memory;
• comparing the digital values with limit values to generate flag values, and storing the flag values in predefined flag locations within the memory;
• and
• in accordance with instructions received from a host device, enabling the host device to read directly from and write directly to locations within the memory, including the predefined flag locations.

A method of monitoring an optoelectronic device, comprising:

• receiving a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, converting the received analog signals into digital values, and storing the digital values in predefined locations within a memory;
• comparing the digital values with limit values to generate flag values, and storing the flag values in predefined flag locations within the memory;
• and
• in accordance with instructions received from a host device, enabling the host device to read directly from and write directly to locations within the memory, including the predefined flag locations;
• wherein the plurality of analog signals includes laser bias current, laser output power, and received power.