Nano-size semiconductor component and method of making

A method for making a nano-size semiconductor component within a wide-bandgap semiconductor substrate, the method comprising, the steps of:

• providing a wide-bandgap semiconductor substrate of essentially a single crystal compound;
• directing a first thermal energy beam onto a first portion of the wide-bandgap semiconductor substrate for heating the first portion to change the crystalline compound of the first portion of the wide-bandgap semiconductor substrate into a first element of a semiconductor component;
• and
• directing a second thermal energy beam onto a second portion of the wide-bandgap semiconductor substrate adjacent to the first portion of the wide-bandgap semiconductor substrate for heating the second portion to form a second element of the semiconductor component.

A method for making a nano-size field effect transistor within a wide-bandgap semiconductor substrate, the method comprising, the steps of:

• providing a wide-bandgap semiconductor substrate of essentially a single crystal compound;
• and
• directing a first thermal energy beam onto a first portion of the wide-bandgap semiconductor substrate for heating the first portion to change the crystalline structure of the first portion of the wide-bandgap semiconductor substrate into a gate of the nano-size field effect transistor;
• directing a second thermal energy beam onto a second portion of the wide-bandgap semiconductor substrate adjacent to the first portion of the wide-bandgap semiconductor substrate for forming a source of the of the nano-size field effect transistor;
• and
• directing a third thermal energy beam onto a third portion of the wide-bandgap semiconductor substrate adjacent to the first portion of the wide-bandgap semiconductor substrate for forming a drain of the of the nano-size field effect transistor.

A method for making a nano-size element within a wide-bandgap semiconductor substrate, the method comprising, the steps of:

• providing a wide-bandgap semiconductor substrate;
• providing a doping atmosphere for the wide-bandgap semiconductor substrate;
• and
• projecting a thermal energy beam onto the wide-bandgap semiconductor substrate for heating the wide-bandgap semiconductor substrate for changing the structure of the wide-bandgap semiconductor with the doping atmosphere to provide the nano-size element.

A method for making a nano-size element within a wide-bandgap semiconductor substrate, the method comprising, the steps of:

• providing a wide-bandgap semiconductor substrate;
• projecting a thermal energy beam onto the wide-bandgap semiconductor substrate for heating the wide-bandgap semiconductor substrate for changing the structure of the wide-bandgap semiconductor with to provide the nano-size conducting element;
• providing a doping atmosphere for the wide-bandgap semiconductor substrate;
• and
• projecting a thermal energy beam onto a portion of the nano-size conducting element for heating the portion of the nano-size conducting element in the presence of the doping atmosphere for changing the structure of the portion of the nano-size conducting element to provide the nano-size element.