ECC circuit-containing semiconductor memory device and method of testing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToshiyuki Honda
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToshiyuki Honda
Estimating the term…
In an ECC circuit of an ECC circuit-containing semiconductor memory device, an error correcting code/syndrome generating circuit and a data correcting circuit are disposed. In portions of the ECC circuit connected to buses, a data bus input control circuit for controlling input of a data from a data bus; an error correcting code bus input control circuit for controlling input of an error correcting code from an error correcting code bus; and an error correcting code bus output control circuit for controlling output of an error correcting code to the error correcting code bus are disposed. A portion corresponding to an error correcting code generator of a conventional technique is included in the ECC circuit, so that the ECC circuit can function both as an error correcting code generator and a decoder. As a result, the entire device can be made compact.
An ECC circuit-containing semiconductor memory device comprising:
An ECC circuit-containing semiconductor memory device comprising:
An ECC circuit-containing semiconductor memory device comprising:
A method of testing an ECC circuit-containing semiconductor memory device including error correcting code generation means including a circuit having a function to generate an error correcting code consisting of plural bits on the basis of a data consisting of plural bits, data storage means for storing said plural bits of said data, error correcting code storage means for storing said plural bits of said error correcting code, and decoding means including a circuit having a function to generate a syndrome for error correction by calculation processing on the basis of said data stored in said data storage means and said error correcting code stored in said error correcting code storage means, and a circuit having a function to correct an error of each bit of said data, said error correcting code generation means sharing a circuit with said decoding means, and said shared circuit having a function to generate said error correcting code and said syndrome, wherein the functions of said error correcting code generation means and said decoding means are carried out by a shared circuit such that said shared circuit generates said error correcting code and said syndrome, comprising the step of:
A method of testing an ECC circuit-containing semiconductor memory device including error correcting code generation means for generating an error correcting code consisting of plural bits on the basis of a data consisting of plural bits, data storage means for storing said plural bits of said data, error correcting code storage means for storing said plural bits of said error correcting code, and decoding means having a function to correct an error of each bit of said data by calculating a syndrome for error correction on the basis of said data stored in said data storage means and said error correcting code stored in said error correcting code storage means, comprising the step of:
A method of testing an ECC circuit-containing semiconductor memory device including error correcting code generation means for generating an error correcting code consisting of plural bits on the basis of a data consisting of plural bits, data storage means for storing said plural bits of said data, error correcting code storage means for storing said plural bits of said error correcting code, and decoding means having a function to correct an error of each bit of said data by calculating a syndrome for error correction on the basis of said data stored in said data storage means and said error correcting code stored in said error correcting code storage means, comprising the step of:
Dependencies are inferred from the claim text.