Semiconductor light-emitting device and process for producing the same
AssigneeSony Corporation
InventorsHiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
Life of this patent
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Abstract
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
Claims4
A semiconductor light-emitting device comprising:
- a substrate including a substrate surface positioned along a substrate surface plane;
- a crystal layer comprising an approximately hexagonal prismoid, having a face oriented about an S-plane, and a top region oriented about a C-plane;
- and
- a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along at least a portion of the approximately hexagonal prismoid.
A semiconductor light-emitting device comprising:
- a substrate including a substrate surface positioned along a surface plane;
- a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane;
- and
- a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface, wherein the crystal surface plane comprises a plane having a plane orientation inclined at an angle ranging from about 5 to about 6 degrees with respect to at least one of a S-plane and a (11-22) plane.
A semiconductor light-emitting device comprising:
- a substrate including a substrate surface positioned along a substrate surface plane;
- a crystal layer comprising an approximately hexagonal pyramid, having a face oriented along an S-plane that diagonally intersects the substrate surface plane;
- and
- a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along at least a portion of the approximately hexagonal pyramid, wherein a current is injected into the active layer such that a current density is lower near or at an apex of the approximately hexagonal pyramid than in the face of the approximately hexagonal pyramid.
A semiconductor light-emitting device comprising:
- a substrate including a substrate surface positioned along a substrate surface plane;
- a crystal grown layer formed by selective growth and including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane;
- an active layer which is formed along at least a portion of the crystal grown layer that emits light upon injection of an amount of current;
- and a reflecting region which is formed substantially parallel to the crystal surface plane and reflects at least a portion of the light emerging from the active layer, wherein the active layer is approximately parallel to a plane having a plane orientation inclined at an angle ranging from about 5 to about 6 degrees with respect to at least one of a S-plane and a (11-22) plane.
Dependencies are inferred from the claim text.