US 6,919,119 B2 · Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

Abstract

An electronic or opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electrode substrate first, such that the nano-scale basic elements comprising this film material are embedded in a void matrix while having electrical connectivity with the electrode substrate. For example, the film material may comprise an array of nano-protrusions electrically connected to the electrode substrate and separated by a void matrix. The interpenetrating network is formed by introducing an appropriate organic/inorganic material into the void volume of the high surface area to volume film material. Further electrode(s) are defined onto the film or intra-void material to achieve a certain device. Charge separation, charge injection, charge storage, field effect devices, ohmic contacts, and chemical sensors are possible.

Claims21

Dependent claims

An electronic or opto-electronic device comprising:

a first conductive layer;
a nanostructured high surface area to volume ratio film material disposed on said first conductive layer, such that nano-scale elements of said film material are disposed in an interconnected void matrix and wherein each said nano-scale element has electrical connectivity with the said first conductive layer;
an organic or inorganic intra-void material filled into said continuous void volume of said nanostructured high surface area to volume ratio film defining an interface between the intra-void material and each of the nano-scale elements;
and
a second conductive layer electrode in contact with said intra-void material;
wherein charge separation, charge injection or charge storage occurs at said interface.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/165,858Filed 8 Jun 2002 · continuation in part

Priority

30 May 2000

Published

US 2002/0132101 A119 Dec 2002

Granted

19 Jul 2005

Term ends

Not estimatedThe source records don’t support an estimate.

Classification27 codes

H10K 50/14
OLEDs or polymer light-emitting diodes [PLED]: carrier transporting layers
B82Y 10/00
Nanotechnology for information processing, storage or transmission
H10K 30/10
Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: comprising…
H10K 30/352
Comprising inorganic nanostructures, e.g. CdSe nanoparticles: the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in…

Family

Application09/580,105Parent of this continuation · filed 30 May 2000

Application60/296,857Us provisional application · filed 8 Jun 2001

Application10/104,749Parent of this continuation-in-part · filed 22 Mar 2002

Application10/144,456Parent of this continuation-in-part · filed 13 May 2002

US 2002/0192441 A1Pre-grant publication · published 19 Dec 2002

US 6,399,177 B1Parent of this continuation

Application10/104,749Parent of this continuation

US 2002/0132101 A1Published application

US 2002/0187312 A1Published application

US 7,122,790 B2Related patent

US 6,919,119 B2This patent

From the US filing history. Foreign family members aren’t listed.

Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

Life of this patent

Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

Life of this patent

Abstract

Claims21