Layered phosphor coatings for LED devices

A light emitting device comprised of a light emitting diode on a mounting surface, said light emitting diode including a substrate layer comprised of silicon carbide and at least one active region, said substrate has a height of at least 150 μm, at least one resilient substantially transparent and substantially phosphor free polymer layer extending from said mounting surface to above at least one quarter of a height of the substrate layer and below a top surface of the light emitting diode, and at least a second layer containing phosphor extending from said phosphor free polymer layer to a height above a top surface of said light emitting diode.

A light emitting device comprised of a light emitting diode emitting lights between 360 and 420 nanometers on a mounting surface, said light emitting diode including a substrate layer comprised of silicon carbide and at least one active region, at least one resilient substantially transparent and substantially phosphor free polymer layer extending from said mounting surface to above at least one quarter of a height of the substrate layer and below a top surface of the light emitting diode, and at least a second layer containing phosphor extending from said phosphor free polymer layer to a height above a top surface of said light emitting diode.

A light emitting device comprised of a light emitting diode on a mounting surface and an encapsulant layer, said light emitting diode including a substrate layer comprised of silicon carbide and at least one active region, at least one resilient substantially transparent and substantially phosphor free polymer layer extending from said mounting surface to above at least one quarter of a height of the substrate layer and below a top surface of the light emitting diode, and at least a second layer containing phosphor extending from said phosphor free polymer layer to a height above a top surface of said light emitting diode.

A light emitting device comprised of a light emitting diode on a mounting surface, said light emitting diode including a substrate layer comprised of silicon carbide and at least one active region, at least one resilient substantially transparent and substantially phosphor free polymer layer extending from said mounting surface to above at least one quarter of a height of the substrate layer and below a top surface of the light emitting diode, at least a second layer containing phosphor extending from said phosphor free polymer layer to a height above a top surface of said light emitting diode, and said phosphor is selected from TAG:Ce, YAG:Ce and mixtures or derivatives thereof.

A method of manufacturing a light emitting device comprising mounting a light emitting diode on a surface, said light emitting diode having a substrate layer and at least one active region, providing an electrical connection to said light emitting diode, depositing a substantially transparent and substantially phosphor free polymer adjacent said mounting surface to a height between above at least one quarter of a height of the substrate layer and just below the active region of the light emitting diode, and depositing at least a second layer containing phosphor disposed in a carrier material on said phosphor free polymer layer to above a top surface of said light emitting diode.

A light emitting device comprised of a light emitting diode on a mounting surface, said light emitting diode including a substrate layer, a substantially transparent and substantially phosphor free polymer layer extending from said mounting surface to above at least one quarter of a height of the substrate layer and just below the active region of the light emitting diode, and a phosphor containing layer extending from said phosphor free polymer layer to a height above the top surface of said light emitting diode.