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AssigneeKYOCERA Corporation
InventorsShunichi Murakawa, Yumiko Itoh, Hiroshi Aida, Katsumi Nakamura, Tetsuzi Hayasaki
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A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl3 or Cl2 is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3Y2O3.5Al2O3, 2Y2O3.Al2O3, Y2O3.Al2O3 or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 μm or less in center line average roughness Ra is utilized.
A member having a resistance to a halogen plasma, which is exposed to a halogen gas and the plasma, wherein the member comprises an yttrium.aluminum.garnet sintered body, said sintered body having a porosity of 3% or less and also having a surface of 1 μm or less in center line average roughness Ra.
A window member for a plasma processing apparatus, which has one surfaces to be exposed to a halogen plasma, wherein the window member comprises a light transmissive substrate and a light transmissive yttrium-aluminum-garnet sintered body of 0.1 to 10.0 mm in thickness bonded to the substrate on at least said aide to be exposed to the plasma.
A member having a resistance to a halogen plasma which is exposed to a halogen containing gas and its plasma, said member comprising a ceramic sintered body containing, on oxide basis, MgO in an amount of 15 wt % or more and alumina in an amount of 85 wt % or less in the terms of oxides and including any one of a single phase of MgO, mixed phases of MgAl2O4 and MgO, a single phase of MgAl2O4 and mixed phase of MgAl2O4 and Al2O3, wherein the ceramic sintered body has a crystalline phase having an average crystal grain size of 3 μm or more and also having a porosity of 0.2% or less.
A member according to 10, wherein the member is a susceptor for support of a semiconductor wafer or a clamp member for retaining a peripheral edge portion of a semiconductor wafer.
A member according to 10, wherein the member is one of an inner wall member, a gas nozzle, a, support ring and a liner material in a processing chamber.
A member having a resistance to a halogen plasma which is exposed to a halogen containing gas and its plasma, said member comprising a ceramic sintered body containing, on oxide basis, MgO in an amount of 15 wt % or more and alumina in an amount of 85 wt % or less in the terms of oxides and including any one of a single phase of MgO, mixed phases of MgAl2O4 and MgO, a single phase of MgAl2O4 and mixed phases of MgAl2O4 and Al2O3, wherein the member is a susceptor for support of a semiconductor wafer or a clamp member for retaining a peripheral edge portion of a semiconductor wafer.
A member having a resistance to a halogen plasma which is exposed to a halogen containing gas and its plasma, said member comprising a ceramic sintered body containing, on oxide basis, MgO in an amount of 15 wt % or more and alumina in an amount of 85 wt % or less in the terms of oxides and including any one of a single phase of MgO, mixed phases of MgAl2O4 and MgO, a single phase of MgAl2O4 and mixed phases of MgAl2O4 and Al2O3, wherein the member is one of a gas nozzle, a support ring and a liner material in a processing chamber.
Dependencies are inferred from the claim text.