Feedback control of plasma-enhanced chemical vapor deposition processes

A method of determining a model for a film property in a plasma CVD tool, comprising:

• (a) depositing a film on at least one wafer in a plasma CVD deposition step using a deposition recipe having at least one deposition recipe parameter that corresponds to a deposition model variable;
• (b) identifying a plurality of regions of the at least one wafer and measuring a film property for the at least one wafers for at least two of the plurality of regions after the deposition of step (a), wherein each of the two regions is a distinct, substantially annular region;
• (c) recording the deposition parameter and the measured film property for at least two of the plurality of regions for the at least one wafer on a recordable medium;
• and
• (d) fitting the data to a linear or non-linear curve that establishes a relationship between the film property of a region of the wafer and the deposition model.

A plasma chemical vapor deposition (CVD) tool for deposition of a film, comprising:

• a plasma CVD) apparatus comprising a chamber, a vacuum system, an RF generator for generating a source plasma, and a gas delivery system;
• controlling means capable of controlling an operating parameter of the deposition process;
• and
• a controller operatively coupled to the controlling means, the controller operating the controlling means to adjust the operating parameter of the deposition process as a function of a model for a film property, the model comprising:
• a deposition model for plasma CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties, wherein the model defines a plurality of regions on a wafer and identifies a deposition variable and a film property for each of at least two regions of the wafer, wherein each of the two regions is a distinct, substantially annular region.

A method of film deposition in a plasma chemical vapor deposition (CVD) process, comprising:

• a) providing a model for plasma CVD deposition of a film that identifies one or more film properties for the wafer and at least one deposition model variable that correlates with the film property;
• b) depositing a film onto a wafer using a first deposition recipe using a deposition recipe comprising at least one deposition parameter that corresponds to at least one deposition variable;
• c) measuring, in at least two distinct, substantially annular regions, the film property for at least one of said one or more film properties for the deposited film of step (b) for the wafer;
• d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a);
• and
• e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property profile.

A chemical vapor deposition (CVD) tool for deposition of a film, comprising:

• a) modeling means for defining a plurality of regions on a wafer and identifying one or more film properties for at least two of the regions of the wafer;
• b) means for depositing a film onto a wafer using a first deposition recipe comprising at least one deposition parameter, wherein the at least one deposition parameter corresponds to a deposition model variable;
• c) means for measuring a film property for at least one of said one or more film properties for the deposited film of step (b) for at least two regions of the wafer, wherein each of the two regions is a distinct, substantially annular region;
• d) means for calculating an updated model based upon the measured film property of step (c) and the model of step (a);
• and
• e) means for calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property.

method of film deposition in a chemical vapor deposition (CVD) process, comprising:

• a) providing a model for CVD deposition of a film that identifies one or more film properties and at least one deposition model variable that correlates with the one or more film properties and that provides for the effect of tool idle time on the deposition process;
• b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable;
• c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b);
• (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a);
• and
• (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property.

A method of film deposition in a chemical vapor deposition (CVD) process, comprising:

• a) providing a model for CVD deposition of a film that identifies one or more film properties and at least one deposition model variable that correlates with the one or more film properties and that evaluates the reliability of a measurement of a film property;
• b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable;
• c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b);
• (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a);
• and
• (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property.