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US 6,913,706 B2Granted
Double-metal EUV mask absorber
AssigneeIntel Corporation
InventorsPei-Yang Yan, Hsing-Chien Ma, Scott R. Chegwidden
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Abstract
A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.
Claims23
A method to form an EUV mask comprising:
- forming a buffer layer adjacent a reflective multi-layer;
- forming a chromium mask absorber layer adjacent the buffer layer;
- and
- forming a tantalum nitride absorber layer adjacent the chromium mask absorber layer.
1 more element
An EUV mask structure comprising:
- a reflective multi-layer adjacent a substrate;
- a buffer layer adjacent the reflective multi-layer;
- a chromium mask absorber layer adjacent the buffer layer;
- a tantalum nitride mask absorber layer adjacent the chromium mask absorber layer.
1 more element
Dependencies are inferred from the claim text.