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AssigneeNovaled GmbH
InventorsOlaf Kuehl, Horst Hartmann, Olaf Zeika, Martin Pfeiffer, Zheng Youxuan
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The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, it is proposed that as mesomeric compound a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).
A method of doping an organic semiconducting matrix material to vary the electrical properties of the organic semiconducting matrix material comprising depositing an organic mesomeric compound, wherein the mesomeric compound is a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative and in that the mesomeric compound, under like evaporation conditions, has a lower volatility than tetrafluorotetracyano-quinonedimethane (F4TCNQ).
The method of according to claim l, wherein the mesomeric quinoid compound has a formula selected from the group consisting of
An organic semiconducting material containing an organic matrix molecule and an organic dopant, wherein the dopant is organic mesomeric compound, wherein the mesomeric compound is a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative and in that the mesomeric compound, under like evaporation conditions, has a lower volatility than tetrafluorotetracyano-quinonedimethane (F4TCNQ).
Dependencies are inferred from the claim text.