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US 6,908,027 B2Granted
Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process
AssigneeIntel Corporation
InventorsPeter Tolchinsky, Mohamad Shaheen, Ryan Lei, Irwin Yablok
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Abstract
More complete bonding of wafers may be achieved out to the edge regions of the wafer by constrained bond strengthening of the wafers in a pressure bonding apparatus after direct wafer bonding. The pressure bonding process may be accompanied by the application of not above room temperature.
Claims8
A method comprising:
- positioning a pair of wafers in face-to-face contact;
- applying pressure to said wafers to initiate wafer bonding;
- after applying pressure, positioning the wafers between a pair of parallel rigid plates;
- pressing said wafers together between said plates;
- and
- heating said wafers while said wafers are between said pair of parallel plates.
3 more elements
Dependencies are inferred from the claim text.