Integrated method for release and passivation of MEMS structures

A multi-chamber processing system for carrying out an integrated method of obtaining release and passivation of a MEMS structure, said multi-chamber processing system comprising:

• a) a memory that stores instructions for an integrated method of release and passivation of a MEMS structure;
• b) a processor adapted to communicate with said memory and to execute said instructions stored by said memory;
• c) said multi-chamber processing system for carrying out said integrated method of release and passivation of said MEMS structure in accordance with the following method,
• i) placing said MEMS structure in a first processing chamber of said multi-chamber processing system;
• ii) treating a surface of said MEMS structure in said first processing chamber by contacting said surface with a plasma generated from a first source gas comprising oxygen;
• iii) placing said MEMS structure in a second processing chamber of said multi-chamber processing system;
• iv) carrying out a release process, during which a sacrificial layer present within said MEMS structure is removed by a cyclic etch/clean operation which is performed a plurality of times in said second processing chamber;
• v) placing said MEMS structure in a third processing chamber of said multi-chamber processing system;
• vi) contacting oxidizable surfaces of said MEMS structure with a plasma generated from a second source gas comprising oxygen and a source of hydrogen;
• vii) placing said MEMS structure in a fourth processing chamber of said multi-chamber processing system;
• and
• viii) applying a reactive vapor phase precursor for a self-assembled monolayer (SAM) coating to exposed surfaces of said MEMS structure, whereby a hydrophobic SAM is produced on surfaces which were hydroxylated in step vi);
• and
• d) a port adapted to pass communications between said processor and at least one plasma processing chamber within said multi-chamber processing system.

A multi-chamber processing system for carrying out an integrated method of obtaining release and passivation of a MEMS structure, said multi-chamber processing system comprising:

• a) a memory that stores instructions for an integrated method of release and passivation of a MEMS structure;
• b) a processor adapted to communicate with said memory and to execute said instructions stored by said memory;
• c) said multi-chamber processing system for carrying out said integrated method of release and passivation of said MEMS structure in accordance with the following method,
• i) placing said MEMS structure in a first processing chamber of said multi-chamber processing system;
• ii) treating a surface of said MEMS structure in said first processing chamber by contacting said surface with a plasma generated from a first source gas comprising oxygen;
• iii) placing said MEMS structure in a second processing chamber of said multi-chamber processing system;
• iv) carrying out a release process, during which a sacrificial layer present within said MEMS structure is removed by a cyclic etch/clean operation which is performed a plurality of times in said second processing chamber;
• v) placing said MEMS structure in a third processing chamber of said multi-chamber processing system;
• vi) contacting oxidizable surfaces of said MEMS structure with a plasma generated from a second source gas comprising oxygen and a source of hydrogen;
• vii) placing said MEMS structure in a fourth processing chamber of said multi-chamber processing system;
• viii) treating said MEMS structure with at least one solvent which is in vapor phase to remove residues created during step vi);
• ix) placing said MEMS structure in a fifth processing chamber of said multi-chamber processing system;
• and
• x) applying a reactive vapor phase precursor for a self-assembled monolayer (SAM) coating to exposed surfaces of said MEMS structure, whereby a hydrophobic SAM is produced on surfaces which were hydroxylated in step vi);
• and
• d) a port adapted to pass communications between said processor and at least one plasma processing chamber within said multi-chamber processing system.

An article of manufacture used to carry out a method of release and passivation of a MEMS structure, which method reduces stiction in a released element of said MEMS structure, said article of manufacture comprising:

• a recordable medium having recorded thereon a plurality of programming instructions used to program an apparatus which is used to carry out an integrated method of release and passivation of a MEMS structure in accordance with the following method,
• i) treating a surface of said MEMS structure by contacting said surface with a plasma generated from a first source gas comprising oxygen;
• ii) carrying out a release process, during which a sacrificial layer present within said MEMS structure is removed by etching;
• iii) an oxidation step, comprising contacting surfaces of said MEMS structure with a plasma generated from a second source gas comprising oxygen;
• iv) a hydrolysis step, comprising contacting surfaces of said MEMS structure with a source of hydrogen;
• and
• v) applying a reactive vapor phase precursor for a self-assembled monolayer (SAM) coating to exposed surfaces of said MEMS structure, whereby a hydrophobic SAM is produced on surfaces which were hydrolyzed in step iv).

An article of manufacture for use in combination with a multi-chamber processing system for carrying out an integrated method of obtaining release and passivation of a MEMS structure, said article of manufacture comprising:

• a recordable medium having recorded thereon a plurality of programming instructions used to program an apparatus which is used to carry out an integrated method of release and passivation of a MEMS structure in accordance with the following method,
• i) placing said MEMS structure in a first processing chamber of said multi-chamber processing system;
• ii) treating a surface of said MEMS structure in said first processing chamber by contacting said surface with a plasma generated from a first source gas comprising oxygen;
• iii) placing said MEMS structure in a second processing chamber of said multi-chamber processing system;
• iv) carrying out a release process, during which a sacrificial layer present within said MEMS structure is removed by a cyclic etch/clean operation which is performed a plurality of times in said second processing chamber;
• v) placing said MEMS structure in a third processing chamber of said multi-chamber processing system;
• vi) contacting oxidizable surfaces of said MEMS structure with a plasma generated from a second source gas comprising oxygen and a source of hydrogen;
• vii) placing said MEMS structure in a fourth processing chamber of said multi-chamber processing system;
• and
• viii) applying a reactive vapor phase precursor for a self-assembled monolayer (SAM) coating to exposed surfaces of said MEMS structure, whereby a hydrophobic SAM is produced on surfaces which were hydroxylated in step vi).

An article of manufacture for use in combination with a multi-chamber processing system for carrying out an integrated method of obtaining release and passivation of a MEMS structure, said article of manufacture comprising:

• a recordable medium having recorded thereon a plurality of programming instructions used to program an apparatus which is used to carry out an integrated method of release and passivation of a MEMS structure in accordance with the following method,
• i) placing said MEMS structure in a first processing chamber of said multi-chamber processing system;
• ii) treating a surface of said MEMS structure in said first processing chamber by contacting said surface with a plasma generated from a first source gas comprising oxygen;
• iii) placing said MEMS structure in a second processing chamber of said multi-chamber processing system;
• iv) carrying out a release process, during which a sacrificial layer present within said MEMS structure is removed by a cyclic etch/clean operation which is performed a plurality of times in said second processing chamber;
• v) placing said MEMS structure in a third processing chamber of said multi-chamber processing system;
• vi) contacting oxidizable surfaces of said MEMS structure with a plasma generated from a second source gas comprising oxygen and a source of hydrogen;
• vii) placing said MEMS structure in a fourth processing chamber of said multi-chamber processing system;
• viii) treating said MEMS structure with at least one solvent which is in vapor phase to remove residues created during step vi);
• ix) placing said MEMS structure in a fifth processing chamber of said multi-chamber processing system;
• and
• x) applying a reactive vapor phase precursor for a self-assembled monolayer (SAM) coating to exposed surfaces of said MEMS structure, whereby a hydrophobic SAM is produced on surfaces which were hydroxylated in step vi).