Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
AssigneeAdvanced Technology Materials, Inc.
InventorsWilliam A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
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Abstract
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
Claims49
A post CMP cleaning formulation comprising an organic amine, a fluoride source and from 70% to 98% water by weight, based on the total weight of the formulation, wherein the pH of the post CMP cleaning formulation is between about 7 and about 9.
A semiconductor wafer cleaning formulation comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- fluoride source
- 1-35%
- organic amine(s)
- 20-60%
- a nitrogenous component, selected from the group
- 0.1-40%
- consisting of nitrogen-containing carboxylic acids and
- imines
- water
- 20-50%
- and
- metal chelating agent(s)
- 0-21%
- TOTAL
- 100%.
A method for fabricating a semiconductor wafer, comprising:
- plasma etching a metallized layer from a surface of the wafer;
- plasma ashing a resist from the surface of the wafer;
- and
- cleaning the wafer by contacting same with a cleaning formulation, comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- fluoride source
- 1-35%
- organic amine(s)
- 20-60%
- a nitrogenous component, selected from the group
- 0.1-40%
- consisting of nitrogen-containing carboxylic acids and
- imines
- water
- 20-50%
- metal chelating agent(s)
- 0-21%
- TOTAL
- 100%.
A method for fabricating a semiconductor wafer including the steps comprising:
- plasma etching a metallized layer from a surface of the wafer;
- plasma ashing a resist from the surface of the wafer;
- cleaning the wafer by contacting same with a cleaning formulation, comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- a fluoride source;
- 1-35%
- at least one organic amine;
- 20-60%
- a nitrogen-containing carboxylic acid or imine
- 0.1-40%
- water;
- 20-50%
- at least one metal chelating agent
- 0-21%
- TOTAL
- 100%.
A method of removing residue from a wafer following a resist plasma ashing step on said wafer, comprising contacting the wafer with a cleaning formulation, including (i) a fluoride source, (ii) at least one organic amine, (iii) a nitrogen-containing carboxylic acid or an imine, (iv) water, and optionally at least one metal chelating agent.
A wafer cleaning formulation, including (i) a fluoride source, (ii) at least one organic amine, (iii) a nitrogen-containing carboxylic acid or an imine, (iv) water, and optionally at least one metal chelating agent, wherein the pH of the wafer cleaning formulation is between 7 and about 9.
A semiconductor wafer cleaning formulation comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- fluoride source
- 1-35%
- organic amine(s)
- 20-60%
- a nitrogenous component, selected from the group
- 0.1-40%
- consisting of nitrogen-containing carboxylic acids and
- imines
- water
- 20-50%
- and
- metal chelating agent(s)
- 0-21%
- TOTAL
- 100%,
- wherein said fluoride source comprises a compound having the formula R1R2R3R4NF in which each of the R groups is hydrogen or aliphatic, and wherein said formulation includes a metal chelating agent of the formula, R1R2R3R4+−O2CCF3 in which each of the R groups is independently hydrogen or aliphatic.
A semiconductor wafer cleaning formulation comprising the following components in the percentage by weight ranges shown, based on the total weight of such components:
- fluoride source
- 1-35%
- organic amine(s)
- 20-60%
- a nitrogenous component, selected from nitrogen-containing
- 0.1-40%
- carboxylic acids and imines
- water
- 20-50%
- and
- metal chelating agent(s)
- 0-21%
- TOTAL
- 100%,
- wherein said nitrogenous component includes a compound having the formula:
- COOH—CH2—NRR′
- wherein each of R and R′ is independently selected from the group consisting of hydrogen, alkyl, aryl, and carboxylic acids.
Dependencies are inferred from the claim text.