Specific site backside underlaying and micromasking method for electrical characterization of semiconductor devices
AssigneeInternational Business Machines Corporation
InventorsBarbara A. Averill, Terence Kane, Darrell L. Miles, Richard W. Oldrey, John D. Sylvestri
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Abstract
A method for implementing backside probing of a semiconductor device includes isolating an identified defect area on a backside of the semiconductor device, and milling the identified defect area to an initial depth. Edges of the identified defect area are masked, wherein unmasked semiconductor material, beginning at the initial depth, is etched for a plurality of timed intervals until one or more active devices are reached. The one or more active devices are electrically probed.
Claims15
A method for implementing backside probing of a semiconductor device, the method comprising:
- isolating an identified defect area on a backside of the semiconductor device;
- milling said identified defect area to an initial depth;
- masking edges of said identified defect area;
- etching unmasked semiconductor material within the semiconductor device, beginning at said initial depth, for a plurality of timed intervals until one or more active devices are reached;
- and
- electrically probing said one or more active devices.
A method for implementing backside probing of a semiconductor die, the method comprising:
- isolating an identified defect area on a backside of the semiconductor die;
- milling said identified defect area to an initial depth;
- masking edges of said identified defect area;
- etching unmasked semiconductor material, beginning at said initial depth, for a plurality of timed intervals until one or more active devices are reached;
- electrically probing said one or more active devices;
- backfilling a resulting cavity produced from said milling and said etching said backside of the semiconductor device;
- and
- cross sectioning the semiconductor device to locate one or more fail mechanisms associated therewith.
Dependencies are inferred from the claim text.