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AssigneeCabot Corporation
InventorsChristopher A. Michaluk, Louis E. Huber, Mark N. Kawchak, James D. Maguire, Jr.
Estimating the term…
High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.
Tantalum metal having a purity of at last about 99.995% and an average grain size of about 75 microns or less.
A sputtering target comprising tantalum metal in the shape of a sputtering target having a) an average grain size of about 50 microns or less and b) a texture in which a log ratio of (111):(100) center peak intensities of greater than about −2.0, in the substantial absence of (100) textural bands, wherein said tantalum metal has a purity of at least 99.99% tantalum.
Tantalum metal having a purity of a least about 99.995%, an average grain size of about 150 microns or less, and having a uniform primary (111) texture through the thickness of the tantalum metal.
Tantalum metal having an average grain size of about 75 or less, and having 50 ppm or less metallic impurities.
A tantalum sputtering component comprising an average grain size of about 150 microns or less and a uniform texture of primary (111) throughout a thickness of the component, wherein said tantalum sputtering component comprises tantalum having a purity of at least 99.99% tantalum.
A tantalum sputtering component comprising a uniform texture of primary (111) throughout a thickness of the component, wherein said tantalum sputtering component comprises tantalum having a purity of at least 99.99% tantalum.
A tantalum sputtering component comprising an average grain size of about 75 microns or less and a uniform texture of mixed (111) throughout its thickness, which is substantially void of (100) textural bands, wherein said tantalum sputtering component comprises tantalum having a purity of at least 99.99% tantalum.
A tantalum sputtering component comprising a mixed (111) texture throughout its thickness which is substantially void of (100) textural bands wherein said tantalum sputtering component comprises tantalum having a purity of at least 99.99% tantalum.
A tantalum sputter component comprising an average grain size of about 75 microns or less and a uniform texture of mixed (111) throughout its thickness, wherein said tantalum sputtering component comprises tantalum sputtering component comprises tantalum having a purity of at least 99.99% tantalum.
Dependencies are inferred from the claim text.