Long wavelength VCSEL bottom mirror
AssigneeFinisar Corporation
InventorHoki Kwon
Life of this patent
Estimating the term…
Abstract
A vertical cavity surface emitting laser having an InP substrate and a lower mirror stack comprised of a plurality of alternating layers of AlPSb and GaPSb over the InP substrate. An InP spacer is over the lower mirror stack. An active region is over the InP spacer, and a tunnel junction is over the active region. Then a top mirror structure comprised of a low-temperature formed first GaAs buffer layer, a high-temperature formed second GaAs seed layer, an insulating structure having an opening, and a GaAs/Al(Ga)As mirror stack that is grown by lateral epitaxial overgrowth.
Claims22
A vertical cavity surface emitting laser, comprising:
- an InP substrate,
- a lower minor stack comprised of a plurality of alternating layers of AlPSb and GaPSb over thc InP substrate:
- an active region over the lower mirror stack;
- a top mirror stack over the active region, the top mirror stack comprising:
- a first GaAs buffer layer;
- a second GaAs seed layer over the first GaAs buffer layer;
- and
- a plurality of alternating layers of GaAs and Al(Ga)As over the second GaAs seed layer,
- wherein the top mirror stack is grown by MOCVD.
A vertical cavity surface emitting laser, comprising:
- an InP substrate;
- a lower mirror stack comprised of a plurality of alternating layers of AlGalnAs and AlInAs over the lnP substrate;
- an active region over the lower mirror stack;
- a ton mirror stack over the active region, the top mirror stack comprising;
- a first GaAs buffer layer;
- a second GaAs secd layer over the first GaAs buffer layer;
- and
- a plurality of alternating layers of GaAs and AI(Ga)As over the second GaAs seed layer,
- wherein the top mirror stack is grown by MOCVD.
Dependencies are inferred from the claim text.