Semiconductor laser device and manufacturing method thereof
AssigneeLG Electronics Inc.
InventorsWon Taeg Lim, Shi Jong Leem
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor laser device and manufacturing method thereof in which light absorption in a facet decreases and stable high power laser beam is generated. The semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device includes: a Zn diffusion source layer on a facet of the stack structure; and a window layer between the Zn diffusion source layer and the stack structure, for preventing light absorption.
Claims20
A semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device comprising:
- a Zn diffusion source layer on a facet of the stack structure in which light is irradiated from;
- and
- a window layer directly between the Zn diffusion source layer and the stack structure, for preventing light absorption,
- wherein the current blocking layer is formed at both sides of the upper clad layer.
A semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the semiconductor laser device comprising:
- first and second Zn diffusion source layers on a facet of the stack structure and on an opposite side of the facet respectively;
- first and second window layers formed on the stack structure by a Zn diffusion from the first and second Zn diffusion source layers;
- an anti-reflection mirror layer on an outer surface of the first Zn diffusion source layer;
- and
- a high-reflection mirror layer on an outer surface of the second Zn diffusion source layer.
A method for manufacturing a semiconductor laser device having a stack structure in which a lower clad layer, an active layer, an upper clad layer, a current blocking layer, and a cap layer are sequentially formed, the method comprising the steps of:
- (1) forming first and second Zn diffusion source layers on a facet of the stack structure and on an opposite side of the facet respectively;
- (2) forming an anti-reflection mirror layer on an outer surface of the first Zn diffusion source layer and a high-reflection mirror layer on an outer surface of the second Zn diffusion source layer;
- and
- (3) diffusing Zn into the stack structure from the first and second Zn diffusion source layer through a heat treatment.
Dependencies are inferred from the claim text.