Semiconductor memory device and its testing method
AssigneesRenesas Technology Corp., Mitsubishi Electric Engineering Company Limited
InventorsTakanobu Suzuki, Tamaki Tsuruda, Katsushige Hayashi
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AssigneesRenesas Technology Corp., Mitsubishi Electric Engineering Company Limited
InventorsTakanobu Suzuki, Tamaki Tsuruda, Katsushige Hayashi
Estimating the term…
A semiconductor memory device is of a bank switching type having a plurality of memory array banks provided in a memory chip which can be switched from one to another for storage operation. The semiconductor memory device includes: a plurality of memory arrays in the memory array banks; an input/output circuit for transmitting information data between the memory arrays and the outside; a data bus for connecting between the memory arrays and the input/output circuit; and N-channel transistors provided across the data bus. The data bus consists of a plurality of adjacent lines. Each of N-channel transistors is connected at their drain to the corresponding lines of the data bus while at their source to the ground. When a multi-bit test is commenced for writing and reading data on the memory arrays, the N-channel transistors are turned on to connect the lines of the data bus to the ground.
A semiconductor memory device of a bank switching type having a plurality of memory array banks provided in a memory chip which can be switched from one to another for storage operation, comprising:
Dependencies are inferred from the claim text.