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US 6,888,756 B2Granted
Low-voltage non-volatile semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsDae-Seok Byeon, June Lee, Gyung-Han Lee
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Abstract
The disclosure is a non-volatile semiconductor memory device including a bias circuit that generates a bias voltage for controlling an NMOS transistor connected to both a bit line and a page buffer circuit. The bias circuit generates a first voltage, which is greater than a power source voltage, as the bias signal in a precharge period of a read operation. The bias circuit also generates a second voltage, which is less than the power source voltage, as the bias signal in a sensing period of the read operation.
Claims7
A non-volatile semiconductor memory device comprising:
- a bit line connected to a memory cell;
- a sensing circuit that senses data stored in the memory cell;
- a transistor connected to both the bit line and the sensing circuit, the transistor controlled by a predetermined bias signal;
- and
- a bias circuit generating the predetermined bias signal in response to a control signal for a read operation, wherein
- the predetermined bias signal has a first voltage greater than a power source voltage during a precharge period of the read operation, and the predetermined bias signal has a second voltage less than the power source voltage during a sensing period of the read operation.
3 more elements
A non-volatile semiconductor memory device comprising:
- a bit line connected to a memory cell;
- a sensing circuit configured to sense data stored in the memory cell;
- a transistor connected to both the bit line and the sensing circuit, the transistor controlled by a predetermined bias voltage;
- and
- a bias circuit configured to generate the predetermined bias voltage in response to a read operation control signal, wherein the bias circuit includes
- a reference voltage generation circuit configured to receive a power source voltage and to generate a reference voltage that is lower than the power source voltage,
- a charge pump configured to receive the power source voltage and to generate a high voltage that is greater than the power source voltage,
- a first voltage regulator configured to receive the reference voltage and the power source voltage and to generate a first voltage less that is less than the power source voltage that functions as the predetermined bias voltage in response to a first flag signal, and
- a second voltage regulator configured to receive the reference voltage, the power source voltage, and the high voltage, the second voltage regulator configured to generate a second voltage that is higher than the power source voltage that functions as the predetermined bias voltage in response to a second flag signal.
6 more elements
A non-volatile semiconductor memory device comprising:
- a memory cell array comprising a plurality of word lines, a plurality of bit lines arranged in at least one bit line pair, and a plurality of memory cells arranged on intersecting points of the word lines and bit lines;
- a bit line selecting and biasing circuit connected to the at least one bit line pair that selects a first bit line from the at least one bit line pair;
- a page buffer circuit corresponding to the bit line selecting and biasing circuit that reads data from the memory cell array through the first bit line from the at least one bit line pair;
- a first and a second transistor included in the bit line selecting and biasing circuit, the first transistor connected to the first bit line from the at least one bit line pair and the page buffer circuit, the second transistor connected to a second bit line from the at least one bit line pair and the page buffer circuit;
- a bias circuit that generates a bias voltage during the read operation;
- and
- a switch circuit that receives the bias voltage and generates first and second bias signals that control the first and second transistors, respectively, wherein the bias voltage has a first voltage less than a power source voltage in a precharge period of the read operation and has a second voltage greater than the power source voltage in a sensing period of the read operation.
4 more elements
Dependencies are inferred from the claim text.