P-channel dynamic flash memory cells with ultrathin tunnel oxides

A method for operating an enhancement mode p-channel memory cell, comprising:

• refreshing a charge on a floating gate of the enhancement mode p-channel memory cell by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms.

A method for operating an enhancement mode p-channel memory cell, comprising:

• refreshing a charge on a floating gate of the enhancement mode p-channel memory cell by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide for less than 20 microseconds, wherein the floating gate oxide is less than 30 Angstroms.

A method for operating an enhancement mode p-channel memory cell, comprising:

• refreshing a charge on a floating gate of the enhancement mode p-channel memory cell by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms;
• and
• refreshing the enhancement mode p-channel memory cell to renew a charge on the floating gate at 1.0 second intervals.

A method for operating an enhancement mode p-channel memory cell, comprising:

• refreshing a charge on a floating gate of the enhancement mode p-channel memory cell by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms;
• and
• reading the enhancement mode p-channel memory cell by applying a potential of less than 2.5 Volts across the floating gate oxide.

A method for operating a memory device having a plurality of enhancement mode p-channel memory cells, comprising:

• refreshing a charge on a floating gate of at least one enhancement mode p-channel memory cell of the plurality of p-channel memory cells by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms;
• and
• reading the enhancement mode p-channel memory cell by applying a potential to a control gate of the enhancement mode p-channel memory cell of less than 1.0 Volt.

A method for operating a memory device having a plurality of enhancement mode p-channel memory cells, comprising:

• refreshing a charge on a floating gate of at least one enhancement mode p-channel memory cell of the plurality of p-channel memory cells by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms.

A method for operating a memory device having a plurality of enhancement mode p-channel memory cells, comprising:

• refreshing a charge on a floating gate of at least one enhancement mode p-channel memory cell of the plurality of p-channel memory cells by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide for less than 20 microseconds, wherein the floating gate oxide is less than 30 Angstroms.

A method for operating a memory device having a plurality of enhancement mode p-channel memory cells, comprising:

• refreshing a charge on a floating gate of at least one enhancement mode p-channel memory cell of the plurality of p-channel memory cells by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms;
• and
• refreshing the enhancement mode p-channel memory cell to renew a charge on the floating gate at 1.0 second intervals.

A method for operating a memory device having a plurality of enhancement mode p-channel memory cells, comprising:

• refreshing a charge on a floating gate of at least one enhancement mode p-channel memory cell of the plurality of p-channel memory cells by applying an electric field of approximately 10 mega Volts/centimeter (MV/cm) across a floating gate oxide, wherein the floating gate oxide is less than 30 Angstroms;
• and
• reading the enhancement mode p-channel memory cell by applying a potential of less than 2.5 Volts across the floating gate oxide.