Magnetoelectronic memory element with inductively coupled write wires
OwnerMark B. Johnsoninventor
Life of this patent
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Abstract
The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The write circuit uses a pair of inductively coupled write wires in each row and column, which are each given a signal with an amplitude approximately ½ of that required to change the state of the ferromagnetic layer.
Claims21
An electronic device comprising:
- a first semiconductive material capable of conducting an electrical current;
- and
- a second ferromagnetic material with a magnetization state that is magnetically coupled to a portion of the first semiconductive material;
- and
- an isolation element coupled to the first semiconductive material for isolating such first semiconductive material;
- and
- a first write line inductively coupled to said second ferromagnetic material;
- and
- a second write line inductively coupled to said second ferromagnetic material;
- wherein said magnetization state is alterable in response a first write signal and a second write signal being present on said first and second write lines respectively at the same time.
A memory circuit for storing a data value comprising:
- a magnetoelectronic element having a ferromagnetic layer with a magnetization state oriented in a plane of such ferromagnetic layer and corresponding to the data value;
- and
- a first write line inductively coupled to said ferromagnetic layer;
- and
- a second write line inductively coupled to said ferromagnetic layer;
- and
- said first and second write lines being arranged with respect to the ferromagnetic layer such that a write signal can be carried by said first and second write lines to generate a magnetic field that sufficient to alter said magnetization state;
- a CMOS sense amplifier circuit coupled to an output of the magnetoelectronic element for determining whether said data value is a first value or a second value;
- wherein the magnetoelectromc element does not include a separate select transistor for reading said data value.
A hybrid semiconductor—magnetic memory array for storing non-volatile data comprising:
- a plurality of magnetic memory cells located on a semiconductor material, each having a first single ferromagnetic layer with an alterable magnetization state oriented in a plane of such ferromagnetic layer, said alterable magnetization state representing a plurality of respective non-volatile data values;
- and
- a first write line inductively coupled to said first single ferromagnetic layer;
- a second write line inductively coupled to said first single ferromagnetic layer;
- wherein a data value within each of said plurality of magnetic memory cells is alterable in response a first write signal and a second write signal being present on said first and second write lines respectively at the same time to alter said alterable magnetization state of such first single ferromagnetic layer;
- a plurality of semiconductor isolation elements for isolating said plurality of magnetic memory cells from each other, which plurality of isolation elements respond to a select signal for reading a non-volatile data value from said plurality of magnetic memory cells and which are configured in the hybrid semiconductor—magnetic memory array so that each of said plurality of magnetic memory cells magnetic cells has at most one isolation element.
Dependencies are inferred from the claim text.