Selection device for a semiconductor memory device
AssigneeInfineon Technologies AG
InventorHans-Heinrich Viehmann
Life of this patent
Estimating the term…
Abstract
A selection device for a semiconductor memory device for preventing voltage drops caused by read currents in a column multiplexer of a semiconductor memory device includes switch devices having two switch elements. Associated bit lines can be interlinked with a potential sampling connection or a current feed connection of a respective associated sense amplifier by the first and the second switch element.
Claims19
In a semiconductor memory device having a memory area with storage elements, selectable access line devices respectively connected to the storage elements, and a sense-amplifier device with a potential-sensing connection and a current-supply connection, a selection device comprising:
- switching devices each associated with and connected to a respective one of the access line devices for accessing the storage elements in the memory area, each of said switching devices:
- controllably connecting, upon selection, the respective associated access line device to the potential-sensing connection for detecting an electrical potential on the respective access line device and to the current-supply connection for supplying a compensating current to the respective access line device;
- and
- having first and second switching elements and, during operation, said first switching element connecting the associated access line device to the potential-sensing connection and said second switching element connecting the associated access line device to the current-supply connection.
In a semiconductor memory device having a memory area with storage elements, selectable access line devices including bit line devices respectively connected to the storage elements, and a sense-amplifier device with a potential-sensing connection and a current-supply connection, a selection device comprising:
- switching devices each associated with and connected to a respective one of the bit line devices for accessing the storage elements in the memory area, each of said switching devices:
- controllably connecting, upon selection, the respective associated bit line device to the potential-sensing connection for detecting an electrical potential on the respective bit line device and to the current-supply connection for supplying a compensating current to the respective bit line device;
- and
- having first and second switching elements and, during operation, said first switching element connecting the associated bit line device to the potential-sensing connection and said second switching element connecting the associated bit line device to the current-supply connection.
A semiconductor memory device, comprising:
- a memory area having storage elements;
- selectable access line devices respectively connected to said storage elements;
- a sense-amplifier device having a potential-sensing connection and a current-supply connection, said sense-amplifier device connected to said access line devices;
- and
- a selection device having switching devices each associated with and connected to a respective one of said access line devices for accessing the storage elements in the memory area, each of said switching devices:
- controllably connecting, upon selection, the respective associated access line device to the potential-sensing connection for detecting an electrical potential on the respective access line device and to the current-supply connection for supplying a compensating current to the respective access line device;
- and
- having first and second switching elements and, during operation, said first switching element connecting the associated access line device to the potential-sensing connection and said second switching element connecting the associated access line device to the current-supply connection.
Dependencies are inferred from the claim text.